ATMEL AT29BV010A-30TI, AT29BV010A-30TC, AT29BV010A-30JI, AT29BV010A-30JC, AT29BV010A-25TI Datasheet

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ATMEL AT29BV010A-30TI, AT29BV010A-30TC, AT29BV010A-30JI, AT29BV010A-30JC, AT29BV010A-25TI Datasheet

AT29BV010A

Features

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Software Protected Programming

Fast Read Access Time - 200 ns

Low Power Dissipation

15 mA Active Current

20 μA CMOS Standby Current Sector Program Operation

Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector)

Internal Address and Data Latches for 128Bytes

Two 8 KB Boot Blocks with Lockout

Fast Sector Program Cycle Time - 20 ms Max.

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

Description

The AT29BV010A is a 2.7-volt-only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 200 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 20 μA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s Low Voltage Flash family of products.

(continued)

Pin Configurations

PLCC Top View

 

Pin Name

Function

 

A0 - A16

Addresses

 

 

 

 

 

 

 

 

 

 

 

CE

Chip Enable

 

 

 

 

 

 

 

 

 

 

 

OE

Output Enable

 

 

 

 

 

WE

Write Enable

 

I/O0 - I/O7

Data Inputs/Outputs

 

 

 

 

 

 

NC

No Connect

 

 

 

 

 

TSOP Top View

Type 1

1 Megabit

(128K x 8) Single 2.7-volt

Battery-Voltage

CMOS Flash

0519B

4-3

Description (Continued)

To allow for simple in-system reprogrammability, the AT29BV010A does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is similar to r e a d in g fr o m an E P R O M . R ep r og r am mi ng t he AT29BV010A is performed on a sector basis; 128-bytes of data are loaded into the device and then simultaneously programmed.

Block Diagram

Device Operation

READ: The AT29BV010A is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dualline control gives designers flexibility in preventing bus contention.

SOFTWARE DATA PROTECTION PROGRAMMING:

The AT29BV010A has 1024 individual sectors, each 128bytes. Using the software data protection feature, byte loads are used to enter the 128-bytes of a sector to be programmed. The AT29BV010A can only be programmed or reprogrammed using the software data protection feature. The device is programmed on a sector basis. If a byte of data within the sector is to be changed, data for the entire 128-byte sector must be loaded into the device. The data in any byte that is not loaded during the programming of its sector will be indeterminate. The AT29BV010A automatically does a sector erase prior to loading the data into the sector. An erase command is not required.

Software data protection protects the device from inadvertent programming. A series of three program commands to specific addresses with specific data must be presented to the device before programming may occur. The same three program commands must begin each program operation. All software program commands must obey the sector program timing specifications. Power transitions will not reset the software data protection feature, however

4-4 AT29BV010A

During a reprogram cycle, the address locations and 128bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can begin.

the software feature will guard against inadvertent program cycles during power transitions.

Any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, a read operation will effectively be a polling operation.

After the software data protection’s 3-byte command code is given, a byte load is performed by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE.

The 128-bytes of data must be loaded into each sector. Any byte that is not loaded during the programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the device, they are simultaneously programmed during the internal programming period. After the first data byte has been loaded into the device, successive bytes are entered in the same manner. Each new byte to be programmed must have its high to low transition on WE (or CE) within 150 μs of the low to high transition of WE (or CE) of the preceding byte. If a high to low transition is not detected within 150 μs of the last low to high transition, the load period will end and the internal programming period will start. A7 to A16 specify the sector address. The sector address must be valid during each high to low transition of WE (or CE). A0 to A6 specify the byte address

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Device Operation (Continued)

within the sector. The bytes may be loaded in any order; sequential loading is not required.

HARDWARE DATA PROTECTION: Hardware features protect against inadvertent programs to the AT29BV010A in the following ways: (a) VCC sense— if V CC is below 2.0V (typical), the program function is inhibited. (b) VCC power on delay— once V CC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit— holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter— pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.

INPUT LEVELS: While operating with a 2.7V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V.

PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. In addition, users may wish to use the software product identification mode to identify the part (i.e. using the device code), and have the system software use the appropriate sector size for program operations. In this manner, the user can have a common board design for 256K to 4-megabit densities and, with each density’s sector size in a memory map, have the system software apply the appropriate sector size.

For details, see Operating Modes (for hardware operation) or Software Product Identification. The manufacturer and device code is the same for both methods of identification.

Absolute Maximum Ratings*

Temperature Under Bias

................. -55°C to +125°C

Storage Temperature......................

-65°C to +150°C

All Input Voltages

 

(including NC Pins)

 

with Respect to Ground ...................

-0.6V to +6.25V

All Output Voltages

 

with Respect to Ground .............

- 0.6V to VCC + 0.6V

Voltage on A9

 

(including NC Pins)

 

with Respect to Ground ...................

-0.6V to +13.5V

 

 

AT29BV010A

DATA POLLING: The AT29BV010A features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. DATA polling may begin at any time during the program cycle.

TOGGLE BIT: I n a d d i t i o n t o DATA p o l li ng t he AT29BV010A provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle.

OPTIONAL CHIP ERASE MODES: The entire device may be erased by using a 6-byte software code. Please see Software Chip Erase application note for details.

BOOT BLOCK PROGRAMMING LOCKOUT: The AT29BV010A has two designated memory blocks that have a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled. Each of these blocks consists of 8K bytes; the programming lockout feature can be set independently for either block. While the lockout feature does not have to be activated, it can be activated for either or both blocks.

These two 8K memory sections are referred to as boot blocks. Secure code which will bring up a system can be contained in a boot block. The AT29BV010A blocks are located in the first 8K bytes of memory and the last 8K bytes of memory. The boot block programming lockout feature can therefore support systems that boot from the lower addresses of memory or the higher addresses. Once the programming lockout feature has been activated, the data in that block can no longer be erased or programmed; data in other memory locations can still be changed through the regular programming methods. To activate the lockout feature, a series of seven program commands to specific addresses with specific data must be performed. Please see Boot Block Lockout Feature Enable Algorithm.

If the boot block lockout feature has been activated on either block, the chip erase function will be disabled.

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*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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