Features
•Read Access Time - 100 ns
•Word-wide or Byte-wide Configurable
•8-Megabit Flash and Mask ROM Compatable
•Low Power CMOS Operation
-100 μA Maximum Standby
-50 mA Maximum Active at 5 MHz
•Wide Selection of JEDEC Standard Packages
-42-Lead 600 mil Cerdip and PDIP
-44-Lead SOIC (SOP)
-48-Lead TSOP (12 mm x 20 mm)
•5V ± 10% Power Supply
•High Reliability CMOS Technology
-2,000 ESD Protection
-200 mA Latchup Immunity
•RapidTM Programming Algorithm - 50 μs/word (typical)
•CMOS and TTL Compatible Inputs and Outputs
•Integrated Product Identification Code
•Commercial and Industrial Temperature Ranges
Description
The AT27C800 is a low-power, high performance 8,388,608-bit UV erasable programmable read only memory (EPROM) organized as either 512K by 16 or 1024K by 8 bits. It requires a single 5V power supply in normal read mode operation. Any word can be accessed in less than 100 ns, eliminating the need for speed-reducing WAIT states. The x16 organization makes this part ideal for high-performance 16and 32-bit
microprocessor systems. |
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(continued) |
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Pin Configurations |
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Pin Name |
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Function |
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A0 - A18 |
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Addresses |
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O0 - O15 |
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Outputs |
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CDIP, PDIP Top View |
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SOIC (SOP) |
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O15/A-1 |
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Output/Address |
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Byte Mode/ |
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A18 |
1 |
42 |
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NC |
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NC |
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1 |
44 |
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NC |
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BYTE/VPP |
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A17 |
2 |
41 |
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A8 |
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A18 |
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2 |
43 |
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NC |
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Program Supply |
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A7 |
3 |
40 |
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A9 |
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A17 |
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3 |
42 |
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A8 |
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A6 |
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39 |
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A10 |
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A7 |
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4 |
41 |
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A9 |
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CE |
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Chip Enable |
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A5 |
5 |
38 |
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A11 |
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A6 |
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5 |
40 |
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A10 |
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A4 |
6 |
37 |
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A12 |
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A5 |
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6 |
39 |
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A11 |
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OE |
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Output Enable |
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A3 |
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36 |
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A13 |
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A4 |
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7 |
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A12 |
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A2 |
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35 |
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A14 |
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A3 |
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8 |
37 |
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A13 |
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NC |
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No Connect |
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A1 |
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34 |
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A15 |
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A2 |
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36 |
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A14 |
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A0 |
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33 |
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A16 |
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A1 |
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35 |
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A15 |
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11 |
32 |
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TSOP |
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CE |
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BYTE/VPP |
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A0 |
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11 |
34 |
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A16 |
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GND |
12 |
31 |
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GND |
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12 |
33 |
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CE |
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BYTE/VPP |
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Type 1 |
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OE |
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13 |
30 |
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O15/A-1 |
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GND |
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13 |
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GND |
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O0 |
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O7 |
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14 |
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O15/A-1 |
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OE |
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O8 |
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28 |
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O14 |
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O0 |
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30 |
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O7 |
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O1 |
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O6 |
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O8 |
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O14 |
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A15 |
1 |
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A16 |
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O9 |
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O13 |
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O1 |
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O6 |
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A14 |
2 |
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47 |
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BYTE/VPP |
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O2 |
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25 |
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O5 |
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O9 |
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O13 |
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A13 |
3 |
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46 |
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GND |
O10 |
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24 |
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O12 |
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O2 |
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O5 |
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A12 |
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45 |
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O15/A-1 |
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O3 |
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O4 |
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O10 |
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O12 |
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A11 |
5 |
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44 |
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O7 |
O11 |
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22 |
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VCC |
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O3 |
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24 |
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O4 |
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A10 |
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O14 |
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O11 |
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22 |
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VCC |
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A9 |
7 |
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42 |
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O6 |
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A8 |
8 |
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41 |
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O13 |
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NC |
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40 |
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O5 |
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NC |
10 |
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39 |
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O12 |
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NC |
11 |
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38 |
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O4 |
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NC |
12 |
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37 |
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VCC |
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NC |
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36 |
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O11 |
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NC |
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O3 |
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NC |
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O10 |
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A18 |
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O2 |
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A17 |
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O9 |
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A7 |
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O1 |
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A6 |
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O8 |
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A5 |
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O0 |
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A4 |
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OE |
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A3 |
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GND |
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A2 |
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CE |
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A1 |
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A0 |
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AT27C800 |
8-Megabit |
(512K x 16 or |
1024K x 8) |
UV Erasable |
EPROM |
AT27C800 |
Preliminary |
1 |
The AT27C800 can be organized as either word-wide or
byte-wide. The organization is selected via the BYTE/VPP
pin. When BYTE/VPP is asserted high (VIH), the word-wide organization is selected and the O15/A-1 pin is used for O15 data output. When BYTE/VPP is asserted low (VIL),the byte wide organization is selected and the O15/A-1 pin is used for the address pin A-1. When the AT27C800 is logically regarded as x16 (word-wide), but read in the bytewide mode, then with A-1=VIL the lower eight bits of the 16 bit word are selected with A-1 =VIH the upper 8 bits of the 16-bit word are selected.
In read mode, the AT27C800 typically consumes 15 mA. Standby mode supply current is typically less than 10 μA.
The AT27C800 is available in industry standard JEDECapproved one-time programmable (OTP)PDIP, SOIC (SOP), and TSOP as well as UV erasable windowed Cerdip packages. The device features two-line control(CE,OE) to eliminate bus contention in high-speed systems.
With high density 512K word or 1024K-bit storage capability, the AT27C800 allows firmware to be to be stored reliably and to be accessed by the system without the delays of mass storage media.
Atmel’s AT27C800 has additional features that ensure high quality and efficient production use. The RapidTM Programming Algorithm reduces the time required to program the part and guarantees reliable programming. Programming time is typically only 50μs/word. The Integrated Product Identification Code electronically identifies the device and manufacturer. This feature is used by industry standard programming equipment to select the proper programming equipment and voltages.
Erasure Characteristics
The entire memory array of the AT27C800 is erased (all outputs read as VOH) after exposure to ultraviolet light at a wavelength of 2,537Å. Complete erasure is assured after a minimum of 20 minutes of exposure using 12,000 μW/cm2 intensity lamps spaced one inch away from the chip. Minimum erase time for lamps at other intensity ratings can be calculated from the minimum integrated erasure dose of 15 W.sec/cm2. To prevent unintentional erasure, an opaque label is recommended to cover the clear window on any UV erasable EPROM that will be subjected to continuous flourescent indoor lighting or sunlight.
System Considerations
Switching between active and standby conditions via the Chip Enable pin may produce transient voltage excursions. Unless accommodated by the system design, these transients may exceed data sheet limits, resulting in device non-conformance. At a minimum, a 0.1 μF high frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This capacitor should be connected between the VCC and Ground terminals of the device, as close to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit boards with large EPROM arrays, a 4.7 μF bulk electrolytic capacitor should be utilized, again connected between the VCC and Ground terminals. This capacitor should be positioned as close as possible to the point where the power supply is connected to the array.
Block Diagram
2 |
AT27C800 |
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Absolute Maximum Ratings*
...................Temperature Under Bias |
-55°C to +125°C |
Storage Temperature ........................ |
-65°C to +150°C |
Voltage on Any Pin with |
-2.0V to +7.0V(1) |
with Respect to Ground..................... |
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Voltage on A9 with |
-2.0V to +14.0V(1) |
Respect to Ground ......................... |
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VPP Supply Voltage with |
-2.0V to +14.0V(1) |
Respect to Ground .......................... |
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Integrated UV Erase Dose............... |
7258 W •sec/cm2 |
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AT27C800
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note: 1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is Vcc + 0.75V DC which may overshoot to + 7.0V for pulses of less than 20 ns.
Operating Modes
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Outputs |
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Mode\Pin |
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Ai |
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O0-O7 |
O8-O14 |
O15/A-1 |
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CE |
OE |
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BYTE/VPP |
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Read Word-wide |
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V |
IL |
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V |
X(1) |
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V |
IH |
D |
OUT |
D |
OUT |
D |
OUT |
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IL |
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Read Byte-wide Upper |
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V |
IL |
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V |
X(1) |
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V |
D |
OUT |
High Z |
V |
IH |
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IL |
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IL |
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Read Byte-wide Lower |
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V |
IL |
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V |
X(1) |
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V |
D |
OUT |
High Z |
V |
IL |
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IL |
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IL |
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Output Disable |
X(1) |
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V |
X(1) |
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X |
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High Z |
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IH |
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Standby |
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V |
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X(1) |
X(1) |
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X(5) |
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High Z |
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IH |
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Rapid Program(2) |
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V |
IL |
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V |
Ai |
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V |
PP |
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D |
IN |
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IH |
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PGM Verify |
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X |
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VIL |
Ai |
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VPP |
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DOUT |
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PGM Inhibit |
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V |
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V |
X(1) |
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V |
PP |
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High Z |
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IH |
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IH |
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Product Identification(4) |
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V |
IL |
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V |
A9 = V |
(3) |
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V |
IH |
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Identification Code |
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IL |
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H |
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A0 = VIH or VIL |
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A1 - A18 = VIL |
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Notes: 1. X can be VIL or VIH.
2.Refer to the programming characteristics tables in this data sheet.
3.VH = 12.0 ± 0.5V.
4.Two identifier words may be selected. All Ai inputs are held low (VIL) except A9,which is set to VH, and A0, which is toggled low (VIL) to select the Manufacturer’s Identification word and high (VIH) to select the Device Code word.
5.Standby VCC current (ISB) is specified with VPP = VCC. VCC > VPP will cause a slight increase in ISB.
3