Analog Devices OP162GP, OP462HRU, OP462GS, OP462GP, OP462DS Datasheet

a		15 MHz Rail-to-Rail
		Operational Amplifiers
		OP162/OP262/OP462

FEATURES

Wide Bandwidth: 15 MHz

Low Offset Voltage: 325 V max

Low Noise: 9.5 nV/√Hz @ 1 kHz

Single-Supply Operation: +2.7 V to +12 V

Rail-to-Rail Output Swing

Low TCVOS: 1 V/ C typ

High Slew Rate: 13 V/ s

No Phase Inversion

Unity Gain Stable

APPLICATIONS

Portable Instrumentation

Sampling ADC Amplifier

Wireless LANs

Direct Access Arrangement

Office Automation

GENERAL DESCRIPTION

The OP162 (single), OP262 (dual), OP462 (quad) rail-to-rail 15 MHz amplifiers feature the extra speed new designs require, with the benefits of precision and low power operation. With their incredibly low offset voltage of 45 V (typ) and low noise, they are perfectly suited for precision filter applications and instrumentation. The low supply current of 500 A (typ) is critical for portable or densely packed designs. In addition, the rail-to-rail output swing provides greater dynamic range and control than standard video amplifiers provide.

These products operate from single supplies as low as +2.7 V to dual supplies of ± 6 V. The fast settling times and wide output swings recommend them for buffers to sampling A/D converters. The output drive of 30 mA (sink and source) is needed for many audio and display applications; more output current can be supplied for limited durations.

The OP162 family is specified over the extended industrial temperature range (–40°C to +125°C). The single OP162 and dual OP262 are available in 8-lead PDIP, SOIC and TSSOP packages. The quad OP462 is available in 14-lead PDIP, narrow-body SOIC and TSSOP packages.

PIN CONFIGURATIONS

8-Lead Narrow-Body SO	8-Lead Plastic DIP
(S Suffix)	(P Suffix)

	NULL	1	8	NULL	NULL	1	OP162	8	NULL
	–IN A	OP162		V+
	+IN A			OUT A	–IN A	2		7	V+
	V–	4	5	NC	+IN A	3		6	OUT A
	NC = NO CONNECT				V–	4		5	NC
						NC = NO CONNECT

8-Lead TSSOP

(RU Suffix)

NULL		1	8		NULL
–IN A					V+
		OP162
+IN A					OUT A
		4	5
V–					NC

NC = NO CONNECT

8-Lead Narrow-Body SO	8-Lead Plastic DIP
(S Suffix)	(P Suffix)

	OUT A	1	8	V+	OUT A	1	OP262	8	V+
	–IN A	OP262		OUT B
	+IN A			–IN B	–IN A	2		7	OUT B
	V–	4	5	+IN B	+IN A	3		6	–IN B
					V–	4		5	+IN B

8-Lead TSSOP

(RU Suffix)

OUT A		1	8		V+
–IN A					OUT B
		OP262
+IN A					–IN B
		4	5
V–					+IN B

14-Lead Narrow-Body SO	14-Lead Plastic DIP
(S Suffix)	(P Suffix)

OUT A			1	14			OUT D
–IN A							–IN D
+IN A			OP462				+IN D
V+							V–
+IN B							+IN C
–IN B				8			–IN C
OUT B			7				OUT C

OUT A	1		14	OUT D
–IN A	2		13	–IN D
+IN A	3		12	+IN D
V+	4	OP462	11	V–
+IN B	5		10	+IN C
–IN B	6		9	–IN C
OUT B	7		8	OUT C

	14-Lead TSSOP
	(RU Suffix)
	OUT A		1	14		OUT D
	–IN A					–IN D
	+IN A					+IN D
				OP462
	V+					V–
	+IN B					+IN C
REV. C	–IN B		7	8		–IN C
	OUT B					OUT C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2000

OP162/OP262/OP462–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = +5.0 V, VCM = 0 V, TA = +25 C, unless otherwise noted)

Parameter	Symbol	Conditions		Min	Typ	Max	Units
INPUT CHARACTERISTICS							µV
Offset Voltage	VOS	OP162G, OP262G, OP462G,			45	325
		–40°C ≤ TA ≤ +125°C	≤ +125°C			800	µV
		H Grade, –40°C ≤ TA				1	mV
		D Grade, –40°C ≤ TA	≤ +125°C		0.8	3	mV
						5	mV
Input Bias Current	IB	–40°C ≤ TA ≤ +125°C			360	600	nA
						650	nA
Input Offset Current	IOS				± 2.5	± 25	nA
Input Voltage Range	VCM	–40°C ≤ TA ≤ +125°C				± 40	nA
		0 V ≤ VCM ≤ +4.0 V,		0		+4	V
Common-Mode Rejection	CMRR
		–40°C ≤ TA ≤ +125°C		70	110		dB
Large Signal Voltage Gain	AVO	RL = 2 kΩ, 0.5 ≤ VOUT ≤ 4.5 V			30		V/mV
		RL = 10 kΩ, 0.5 ≤ VOUT ≤ 4.5 V		65	88		V/mV
		RL = 10 kΩ, –40°C ≤ TA ≤ +125°C		40			V/mV
Long-Term Offset Voltage	VOS	G Grade1				600	µV
Offset Voltage Drift	∆VOS/∆T	Note 2			1		µV/°C
Bias Current Drift	∆IB/∆T				250		pA/°C
OUTPUT CHARACTERISTICS		IL = 250 µA, –40°C ≤ TA ≤ +125°C
Output Voltage Swing High	VOH			4.95	4.99		V
		IL = 5 mA		4.85	4.94		V
Output Voltage Swing Low	VOL	IL = 250 µA, –40°C ≤ TA ≤ +125°C			14	50	mV
		IL = 5 mA			65	150	mV
Short Circuit Current	ISC	Short to Ground			± 80		mA
Maximum Output Current	IOUT				± 30		mA
POWER SUPPLY
Power Supply Rejection Ratio	PSRR	VS = +2.7 V to +7 V			120		dB
		–40°C ≤ TA ≤ +125°C		90			dB
Supply Current/Amplifier	ISY	OP162, VOUT = 2.5 V			600	750	µA
		–40°C ≤ TA ≤ +125°C				1	mA
		OP262, OP462, VOUT = 2.5 V			500	700	µA
		–40°C ≤ TA ≤ +125°C				850	µA
DYNAMIC PERFORMANCE		1 V < VOUT < 4 V, RL = 10 kΩ			10		V/µs
Slew Rate	SR
Settling Time	tS	To 0.1%, AV = –1, VO = 2 V Step			540		ns
Gain Bandwidth Product	GBP				15		MHz
Phase Margin	φm				61		Degrees
NOISE PERFORMANCE	en p-p	0.1 Hz to 10 Hz			0.5		µV p-p
Voltage Noise
Voltage Noise Density	en	f = 1 kHz			9.5		nV/√Hz
Current Noise Density	in	f = 1 kHz			0.4		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subj]ect to change without notice.

–2–

REV. C

OP162/OP262/OP462

ELECTRICAL CHARACTERISTICS (@ VS = +3.0 V, VCM = 0 V, TA = +25 C, unless otherwise noted)

Parameter	Symbol	Conditions		Min	Typ	Max	Units
INPUT CHARACTERISTICS							µV
Offset Voltage	VOS	OP162G, OP262G, OP462G			50	325
		H Grade, –40°C ≤ TA	≤ +125°C			1	mV
		D Grade, –40°C ≤ TA	≤ +125°C		0.8	3	mV
						5	mV
Input Bias Current	IB				360	600	nA
Input Offset Current	IOS				± 2.5	± 25	nA
Input Voltage Range	VCM	0 V ≤ VCM ≤ +2.0 V,		0		+2	V
Common-Mode Rejection	CMRR
		–40°C ≤ TA ≤ +125°C		70	110		dB
Large Signal Voltage Gain	AVO	RL = 2 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V			20		V/mV
		RL = 10 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V		20	30		V/mV
Long-Term Offset Voltage	VOS	G Grade1				600	µV
OUTPUT CHARACTERISTICS		IL = 250 µA
Output Voltage Swing High	VOH			2.95	2.99		V
		IL = 5 mA		2.85	2.93		V
Output Voltage Swing Low	VOL	IL = 250 µA			14	50	mV
		IL = 5 mA			66	150	mV
POWER SUPPLY
Power Supply Rejection Ratio	PSRR	VS = +2.7 V to +7 V,
		–40°C ≤ TA ≤ +125°C		60	110		dB
Supply Current/Amplifier	ISY	OP162, VOUT = 1.5 V			600	700	µA
		–40°C ≤ TA ≤ +125°C				1	mA
		OP262, OP462, VOUT = 1.5 V			500	650	µA
		–40°C ≤ TA ≤ +125°C				850	µA
DYNAMIC PERFORMANCE		RL = 10 kΩ					V/µs
Slew Rate	SR				10
Settling Time	tS	To 0.1%, AV = –1, VO = 2 V Step			575		ns
Gain Bandwidth Product	GBP				15		MHz
Phase Margin	φm				59		Degrees
NOISE PERFORMANCE							µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz			0.5
Voltage Noise Density	en	f = 1 kHz			9.5		nV/√Hz
Current Noise Density	in	f = 1 kHz			0.4		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

REV. C

–3–

OP162/OP262/OP462–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 5.0 V, VCM = 0 V, TA = +25 C, unless otherwise noted)

Parameter	Symbol	Conditions		Min	Typ	Max	Units
INPUT CHARACTERISTICS							µV
Offset Voltage	VOS	OP162G, OP262G, OP462G			25	325
		–40°C ≤ TA ≤ +125°C	≤ +125°C			800	µV
		H Grade, –40°C ≤ TA				1	mV
		D Grade, –40°C ≤ TA	≤ +125°C		0.8	3	mV
						5	mV
Input Bias Current	IB	–40°C ≤ TA ≤ +125°C			260	500	nA
						650	nA
Input Offset Current	IOS				± 2.5	± 25	nA
Input Voltage Range	VCM	–40°C ≤ TA ≤ +125°C				± 40	nA
		–4.9 V ≤ VCM ≤ +4.0 V,		–5		+4	V
Common-Mode Rejection	CMRR
		–40°C ≤ TA ≤ +125°C		70	110		dB
Large Signal Voltage Gain	AVO	RL = 2 kΩ, –4.5 V ≤ VOUT ≤ 4.5 V			35		V/mV
		RL = 10 kΩ, –4.5 V ≤ VOUT ≤ 4.5 V		75	120		V/mV
		–40°C ≤ TA ≤ +125°C		25			V/mV
Long-Term Offset Voltage	VOS	G Grade1				600	µV
Offset Voltage Drift	∆VOS/∆T	Note 2			1		µV/°C
Bias Current Drift	∆IB/∆T				250		pA/°C
OUTPUT CHARACTERISTICS		IL = 250 µA, –40°C ≤ TA ≤ +125°C
Output Voltage Swing High	VOH			4.95	4.99		V
		IL = 5 mA		4.85	4.94		V
Output Voltage Swing Low	VOL	IL = 250 µA, –40°C ≤ TA ≤ +125°C			–4.99	–4.95	V
		IL = 5 mA			–4.94	–4.85	V
Short Circuit Current	ISC	Short to Ground			± 80		mA
Maximum Output Current	IOUT				± 30		mA
POWER SUPPLY		VS = ±1.35 V to ± 6 V,
Power Supply Rejection Ratio	PSRR
		–40°C ≤ TA ≤ +125°C		60	110		dB
Supply Current/Amplifier	ISY	OP162, VOUT = 0 V			650	800	µA
		–40°C ≤ TA ≤ +125°C				1.15	mA
		OP262, OP462, VOUT = 0 V			550	775	µA
		–40°C ≤ TA ≤ +125°C				1	mA
Supply Voltage Range	VS			+3.0 (±1.5)		+12 (± 6)	V
DYNAMIC PERFORMANCE		–4 V < VOUT < 4 V, RL = 10 kΩ					V/µs
Slew Rate	SR				13
Settling Time	tS	To 0.1%, AV = –1, VO = 2 V Step			475		ns
Gain Bandwidth Product	GBP				15		MHz
Phase Margin	φm				64		Degrees
NOISE PERFORMANCE							µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz			0.5
Voltage Noise Density	en	f = 1 kHz			9.5		nV/√Hz
Current Noise Density	in	f = 1 kHz			0.4		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

–4–

REV. C

OP162/OP262/OP462

ABSOLUTE MAXIMUM RATINGS	± 6
Supply Voltage . . . . . . . . . . . . . . . . . .		V
Input Voltage1 . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . ± 6	V
Differential Input Voltage2 . . . . . . . .	. . . . . . . . . . . . . ± 0.6	V
Internal Power Dissipation
Plastic DIP (P) . . . . . . . . . . . . . . .	Observe Derating Curves
SOIC (S) . . . . . . . . . . . . . . . . . . .	Observe Derating Curves
TSSOP (RU) . . . . . . . . . . . . . . . .	Observe Derating Curves
Output Short-Circuit Duration . . . .	Observe Derating Curves
Storage Temperature Range . . . . . . .	. . . . . –65°C to +150°C
Operating Temperature Range . . . . .	. . . . . –40°C to +125°C
Junction Temperature Range . . . . . . .	. . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 10 sec)			. . . . . .	. +300°C
Package Type	JA3		JC	Units
8-Lead Plastic DIP (P)	103		43	°C/W
8-Lead SOIC (S)	158		43	°C/W
8-Lead TSSOP (RU)	240		43	°C/W
14-Lead Plastic DIP (P)	83		36	°C/W
14-Lead SOIC (S)	120		36	°C/W
14-Lead TSSOP (RU)	180		35	°C/W

NOTES

1For supply voltages greater than 6 volts, the input voltage is limited to less than or equal to the supply voltage.

2For differential input voltages greater than 0.6 volts the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices. 3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP package; θJA is specified for device soldered in circuit board for SOIC and TSSOP packages.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
OP162GP	–40°C to +125°C	8-Lead Plastic DIP	N-8
OP162GS	–40°C to +125°C	8-Lead SOIC	SO-8
OP162HRU	–40°C to +125°C	8-Lead TSSOP	RU-8
OP262DRU	–40°C to +125°C	8-Lead TSSOP	RU-8
OP262GP	–40°C to +125°C	8-Lead Plastic DIP	N-8
OP262GS	–40°C to +125°C	8-Lead SOIC	SO-8
OP262HRU	–40°C to +125°C	8-Lead TSSOP	RU-8
OP462DRU	–40°C to +125°C	14-Lead TSSOP	RU-14
OP462DS	–40°C to +125°C	14-Lead SOIC	SO-14
OP462GP	–40°C to +125°C	14-Lead Plastic DIP	N-14
OP462GS	–40°C to +125°C	14-Lead SOIC	SO-14
OP462HRU	–40°C to +125°C	14-Lead TSSOP	RU-14

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP162/OP262/OP462 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. C

–5–