Analog Devices MAT04FS, MAT04FP, MAT04EY, MAT04FY Datasheet

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a

Matched Monolithic

Quad Transistor

 

 

MAT04

 

 

 

FEATURES

Low Offset Voltage: 200 V max

High Current Gain: 400 min

Excellent Current Gain Match: 2% max

Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/Hz max Excellent Log Conformance: rBE = 0.6 max

Matching Guaranteed for All Transistors Available in Die Form

PRODUCT DESCRIPTION

The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5 nV/Hz maximum at 100 Hz, IC = 1 mA) and excellent logarithmic conformance. The MAT04 also features a low offset voltage of 200 V and tight current gain matching, to within 2%. Each transistor of the MAT04 is individually tested to data sheet specifications. For matching parameters (offset voltage, input offset current, and gain match), each of the dual transistor combinations are

PIN CONNECTIONS

14-Lead Cerdip (Y Suffix)

14-Lead Plastic DIP (P Suffix)

14-Lead SO (S Suffix)

verified to meet stated limits. Device performance is guaranteed at 25°C and over the industrial and military temperature ranges.

The long-term stability of matching parameters is guaranteed by the protection diodes across the base-emitter junction of each transistor. These diodes prevent degradation of beta and matching characteristics due to reverse bias base-emitter current.

The superior logarithmic conformance and accurate matching characteristics of the MAT04 makes it an excellent choice for use in log and antilog circuits. The MAT04 is an ideal choice in applications where low noise and high gain are required.

REV. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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Tel: 781/329-4700

www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 2002

MAT04–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ TA = 25 C unless otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS, hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MAT04E

 

 

MAT04F

 

 

Parameter

 

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

Current Gain

 

hFE

10 µA IC 1 mA

 

 

 

 

 

 

 

 

 

hFE

0 V VCB 30 V1

400

800

 

300

600

 

 

Current Gain Match

 

IC = 100 µA

 

 

 

 

 

 

 

 

 

 

 

0 V VCB 30 V2

 

0.5

2

 

1

4

%

Offset Voltage

 

VOS

10 µA IC 1 mA

 

 

 

 

 

 

 

 

 

VOS/IC

0 V VCB 30 V3

 

50

200

 

100

400

µV

Offset Voltage Change vs.

 

10 µA IC 1 mA

 

 

 

 

 

 

µV

Collector Current

 

 

 

VCB = 0 V3

 

5

25

 

10

50

Offset Voltage Change vs. VCB

 

VOS/VCB

10 µA IC 1 mA

 

 

 

 

 

 

 

 

 

 

 

0 V VCB 30 V3

 

50

100

 

100

200

µV

Bulk Emitter Resistance

 

rBE

10 µA IC 1 mA

 

 

 

 

 

 

 

 

 

 

VCB = 0 V4

 

0.4

0.6

 

0.4

0.6

Input Bias Current

 

IB

IC = 100 µA

 

 

 

 

 

 

 

 

 

 

 

0 V VCB 30 V

 

125

250

 

165

330

nA

Input Offset Current

 

IOS

IC = 100 µA; VCB = 0 V

 

0.6

5

 

2

13

nA

Breakdown Voltage

 

BVCEO

IC = 10 µA

40

 

 

40

 

 

V

Collector Saturation Voltage

 

VCE(SAT)

IB = 100 µA; IC = 1 mA

 

0.03

0.06

 

0.03

0.06

V

Collector-Base Leakage Current

 

ICBO

VCB = 40 V

 

5

 

 

5

 

pA

Noise Voltage Density

 

en

VCB = 0 V; fO = 10 Hz

 

2

3

 

2

4

nV/Hz

 

 

 

 

IC = 1 mA; fO = 100 Hz

 

1.8

2.5

 

1.8

3

nV/Hz

Gain Bandwidth Product

 

fT

fO = 1 kHz5

 

1.8

2.5

 

1.8

3

nV/Hz

 

IC = 1 mA; VCE = 10 V

 

300

 

 

300

 

MHz

Output Capacitance

 

COBO

VCB = 15 V; IE = 0

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

10

 

 

10

 

pF

Input Capacitance

 

CEBO

VBE = 0 V; IC = 0

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

40

 

 

40

 

pF

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTES

 

 

 

 

 

 

 

 

 

 

 

 

1Current gain measured at IC = 10 A, 100 A and 1 mA.

 

 

 

 

 

 

 

 

 

2

 

100(IB )(hFE MIN )

 

 

 

 

 

 

 

Current gain match is defined as: hFE

=

 

 

 

 

 

 

 

 

 

 

 

 

IC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3Measured at IC = 10 A and guaranteed by design over the specified range of IC. 4Guaranteed by design.

5Sample tested.

Specifications subject to change without notice.

–2–

REV. D

MAT04

ELECTRICAL CHARACTERISTICS (at –25 C TA 85 C for MAT04E, –40 C TA 85 C for MAT04F, unless otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)

 

 

 

 

MAT04E

 

MAT04F

 

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

Current Gain

hFE

10 A IC 1 mA

 

 

 

 

 

 

 

 

 

0 V VCB 30 V1

225

625

 

200

500

 

 

Offset Voltage

VOS

10 A IC 1 mA

 

 

 

 

 

 

V

 

 

0 V VCB 30 V2

 

60

260

 

120

520

Average Offset

TCVOS

IC = 100 A

 

 

 

 

 

 

V/°C

Voltage Drift

 

VCB = 0 V3

 

0.2

1

 

0.4

2

Input Bias Current

IB

IC = 100 A

 

 

 

 

 

 

 

 

 

0 V VCB 30 V

 

160

445

 

200

500

nA

Input Offset Current

IOS

IC = 100 A

 

 

 

 

 

 

 

 

 

VCB = 0 V

 

4

20

 

8

40

nA

Average Offset

TCIOS

IC = 100 A

 

 

 

 

 

 

pA/°C

Current Drift

 

VCB = 0 V

 

50

 

 

100

 

Breakdown Voltage

BVCEO

IC = 10 A

40

 

 

40

 

 

V

Collector-Base

ICBO

VCB = 40 V

 

 

 

 

 

 

 

Leakage Current

 

 

 

0.5

 

 

0.5

 

nA

Collector-Emitter

ICES

VCE = 40 V

 

 

 

 

 

 

 

Leakage Current

 

 

 

5

 

 

5

 

nA

Collector-Substrate

ICS

VCS = 40 V

 

 

 

 

 

 

 

Leakage Current

 

 

 

0.7

 

 

0.7

 

nA

 

 

 

 

 

 

 

 

 

 

REV. D

–3–

Analog Devices MAT04FS, MAT04FP, MAT04EY, MAT04FY Datasheet

MAT04

ABSOLUTE MAXIMUM RATINGS1

 

 

Collector-Base Voltage (BVCBO)

. . . . . . .

. . . . . . . . .

. . . 40 V

Collector-Emitter Voltage (BVCEO) . . . . .

. . . . . . . . .

. . . 40 V

Collector-Collector Voltage (BVCC) . . . . .

. . . . . . . . .

. . . 40 V

Emitter-Emitter Voltage (BVEE)

. . . . . . .

. . . . . . . . .

. . . 40 V

Collector Current . . . . . . . . . .

. . . . . . . .

. . . . . . . . .

. . 30 mA

Emitter Current . . . . . . . . . . . .

. . . . . . . .

. . . . . . . . .

. . 30 mA

Substrate (Pin-4 to Pin-11) Current . . . .

. . . . . . . . .

. . 30 mA

Operating Temperature Range

 

–25°C to +85°C

MAT04EY . . . . . . . . . . . . . .

. . . . . . . .

MAT04FY, FP, FS . . . . . . . .

. . . . . . . .

. . . –40°C to +85°C

Storage Temperature

 

–65°C to +150°C

Y Package . . . . . . . . . . . . . . .

. . . . . . . .

P Package . . . . . . . . . . . . . . .

. . . . . . . .

. . –65°C to +125°C

Lead Temperature (Soldering, 60 sec) . .

. . . . . . . . .

. +300°C

 

 

 

 

 

Package Type

 

JA2

JC

Units

14-Lead Cerdip

 

108

16

°C/W

14-Lead Plastic DIP

 

83

39

°C/W

14-Lead SO

 

120

36

°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2 JA is specified for worst case mounting conditions, i.e., JA is specified for device in socket for cerdip and P-DIP packages; JA is specified for device soldered to printed circuit board for SO package.

DICE CHARACTERISTICS

1.

Q1 COLLECTOR

2.

Q1 BASE

3.

Q1 EMITTER

4.

SUBSTRATE

5.

Q2 EMITTER

6.

Q2 BASE

7.

Q2 COLLECTOR

8.

Q3 COLLECTOR

9.

Q3 BASE

10.

Q3 EMITTER

11.

SUBSTRATE

12.

Q4 EMITTER

13.

Q4 BASE

14.

Q4 COLLECTOR

Die Size 0.060 × 0.060 Inch, 3600 Sq. mm (1.52 × 1.52 mm, 2.31 sq. mm)

ORDERING GUIDE

 

TA = 25 C

Temperature

Package

Package

Model

VOS max

Range

Description

Option

MAT04EY*

200 V

–25°C to +85°C

Cerdip

Q-14

MAT04FY*

400 V

–40°C to +85°C

Cerdip

Q-14

MAT04FP

400 V

–40°C to +85°C

P-DIP-14

N-14

MAT04FS

400 V

–40°C to +85°C

14-Lead SO

SO-14

NOTES

*Not for new designs; obsolete April 2002.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the MAT04 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

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