Analog Devices BUF04GS, BUF04GP, BUF04GBC, BUF04AZ Datasheet

a		Closed-Loop
		High Speed Buffer
		BUF04*

FEATURES Bandwidth – 110 MHz Slew Rate – 3000 V/ms

Low Offset Voltage – <1 mV Very Low Noise – < 4 nV/ÖHz

Low Supply Current – 8.5 mA Mux Wide Supply Range – 65 V to 615 V

Drives Capacitive Loads Pin Compatible with BUF03

APPLICATIONS

Instrumentation Buffer

RF Buffer

Line Driver

High Speed Current Source

Op Amp Output Current Booster

High Performance Audio

High Speed AD/DA

		FUNCTIONAL BLOCK DIAGRAMS
							Plastic DIP
8-Lead Narrow-Body SO					8-Lead and Cerdip
	(S Suffix)						(P, Z Suffix)
1
		BUF04		NULL		1	BUF04		8	NULL
				NC		2	Top View		7	V+
				IN		3			6	OUT
				V–		4			5	NC
							NC = NO CONNECT

GENERAL DESCRIPTION

The BUF04 is a wideband, closed-loop buffer that combines state of the art dynamic performance with excellent dc performance. This combination enables designers to maximize system performance without any speed versus dc accuracy compromises.

Built on a high speed Complementary Bipolar (CB) process for better power performance ratio, the BUF04 consumes less than 8.5 mA operating from ±5 V or ±15 V supplies. With a 2000 V/μs min slew rate, and 100 MHz gain bandwidth product, the BUF04 is ideally suited for use in high speed applications where low power dissipation is critical.

Full ±10 V output swing over the extended temperature range along with outstanding ac performance and high loop gain accuracy makes the device useful in high speed data acquisition systems.

High slew rate and very low noise and THD, coupled with wide input and output dynamic range, make the BUF04 an excellent choice for video and high performance audio circuits.

The BUF04’s inherent ability to drive capacitive loads over a wide voltage and temperature range makes it extremely useful for a wide variety of applications in military, industrial, and commercial equipment.

The BUF04 is specified over the extended industrial (–40°C to +85°C) and military (–55°C to +125°C) temperature range. BUF04s are available in plastic and ceramic DIP plus SO-8 surface mount packages.

Contact your local sales office for MIL-STD-883 data sheet and availability.

*Patent pending.

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: [phone] Fax: [phone]

BUF04–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 615.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Units
INPUT CHARACTERISTICS
Offset Voltage	VOS	–40°C £ TA £ +85°C		0.3	1	mV
				1.3	4	mV
Input Bias Current	IB	VCM = 0		0.7	5	mA
		–40°C £ TA £ +85°C		2.2	10	mA
Input Voltage Range	VCM			± 13		V
Offset Voltage Drift	DVOS/DT			30		mV/°C
Offset Null Range				± 25		mV
OUTPUT CHARACTERISTICS		RL = 150 W,	± 10.5	± 11.1
Output Voltage Swing	VO					V
		–40°C £ TA £ +85°C	± 10	± 11		V
		RL = 2 kW,	± 13	± 13.5		V
		–40°C £ TA £ +85°C	± 13	± 13.15		V
Output Current – Continuous	IOUT		± 50	± 65		mA
Peak Output Current	IOUTP	Note 2		± 80		mA
TRANSFER CHARACTERISTICS		RL = 2 kW
Gain	AVCL		0.995	0.9985	1.005	V/V
		–40°C £ TA £ +85°C	0.995	0.9980	1.005	V/V
Gain Linearity	NL	RL = 1 kW, VO = ± 10 V		0.005		%
		RL = 150 kW		0.008		%
POWER SUPPLY		VS = ±4.5 V to ± 18 V
Power Supply Rejection Ratio	PSRR		76	93		dB
		–40°C £ TA £ +85°C	76	93		dB
Supply Current	ISY	VO = 0 V, RL = ¥		6.9	8.5	mA
		–40°C £ TA £ +85°C		6.9	8.5	mA
DYNAMIC PERFORMANCE		RL = 2 kW, CL = 70 pF				V/ms
Slew Rate	SR		2000	3000
Bandwidth	BW	–3 dB, CL = 20 pF, RL = ¥		110		MHz
Bandwidth	BW	–3 dB, CL = 20 pF, RL = 1 kW		110		MHz
Bandwidth	BW	–3 dB, CL = 20 pF, RL = 150 W		110		MHz
Settling Time		VIN = ±10 V Step to 0.1%		60		ns
Differential Phase		f = 3.58 MHz, RL = 150 W		0.02		Degrees
		f = 4.43 MHz, RL = 150 W		0.03		Degrees
Differential Gain		f = 3.58 MHz, RL = 150 W		0.014		%
		f = 4.43 MHz, RL = 150 W		0.008		%
Input Capacitance				3		pF
NOISE PERFORMANCE						nV/Ö
Voltage Noise Density	en	f = 1 kHz		4				Hz
Current Noise Density	in	f = 1 kHz		2		pA/Ö	Hz

NOTE

1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C with an LTPD of 1.3.

Specifications subject to change without notice.

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						BUF04
ELECTRICAL CHARACTERISTICS (@ VS = 65.0 V, TA = +258C unless otherwise noted)
Parameter	Symbol	Conditions	Min	Typ	Max		Units
INPUT CHARACTERISTICS
Offset Voltage	VOS	–40°C £ TA £ +85°C		0.8	2.0		mV
				1.0	4		mV
Input Bias Current	IB	VCM = 0 V		0.15	5		mA
		–40°C £ TA £ +85°C		1.6	10		mA
Input Voltage Range	VCM			± 3.0			V
Offset Voltage Drift	DVOS/DT			30			mV/°C
Offset Null Range				± 25			mV
OUTPUT CHARACTERISTICS		RL = 150 W,	± 3.0
Output Voltage Swing	VO						V
		–40°C £ TA £ +85°C	± 2.75	± 3.00			V
		RL = 2 kW,	± 3.0	± 3.6			V
		–40°C £ TA £ +85°C	± 3.0	± 3.35			V
Output Current - Continuous	IOUT		± 40	± 75			mA
Peak Output Current	IOUTP	Note 2					mA
TRANSFER CHARACTERISTICS		RL = 2 kW,
Gain	AVCL		0.995	0.9977	1.005		V/V
		–40°C £ TA £ +85°C	0.995		1.005		V/V
Gain Linearity	NL	RL = 1 kW		0.005			%
POWER SUPPLY		VS = ±4.5 V to ± 18 V
Power Supply Rejection Ratio	PSRR		76	93			dB
		–40°C £ TA £ +85°C	76	93			dB
Supply Current	ISY	VO = 0 V, RL = ¥		6.60	8		mA
		–40°C £ TA £ +85°C		6.70	8		mA
DYNAMIC PERFORMANCE		RL = 2 kW, CL = 70 pF					V/ms
Slew Rate	SR			2000
Bandwidth	BW	–3 dB, CL = 20 pF, RL = ¥		100			MHz
Bandwidth	BW	–3 dB, CL = 20 pF, RL = 1 kW		100			MHz
Bandwidth	BW	–3 dB, CL = 20 pF, RL = 150 W		100			MHz
Differential Phase		f = 3.58 MHz, RL = 150 W		0.13			Degrees
		f = 4.43 MHz, RL = 150 W		0.15			Degrees
Differential Gain		f = 3.58 MHz, RL = 150 W		0.04			%
		f = 4.43 MHz, RL = 150 W		0.06			%
NOISE PERFORMANCE							nV/Ö
Voltage Noise Density	en	f = 1 kHz		4					Hz
Current Noise Density	in	f = 1 kHz		2			pA/Ö
								Hz

NOTE

1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

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BUF04

WAFER TEST LIMITS (@ VS = 615.0 V, TA = +258C unless otherwise noted)

Parameter	Symbol	Conditions	Limit	Units
Offset Voltage	VOS	VS = ±15 V	1	mV max
	VOS	VS = ±5 V	2	mV max
Input Bias Current	IB	VCM = 0 V	5	μA max
Power Supply Rejection Ratio	PSRR	V = ±4.5 V to ±18 V	76	dB
Output Voltage Range	VO	RL = 150 Ω	±10.5	V min
Supply Current	ISY	VO = 0 V, RL = 2 kΩ	8.5	mA max
Gain	AVCL	VO = ±10 V, RL = 2 kΩ	1 ± 0.005	V/V

NOTE

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS1					±18 V
Supply Voltage . . . . . . . . . .		. . . . . . . .	. . . . . .	. . . .
Input Voltage . . . . . . . . . . . .		. . . . . . .	. . . . . .	. . . .	. . . . ±18 V
Maximum Power Dissipation . . . . . . .			. . . . . .	. . See Figure 16
Storage Temperature Range				–65°C to +175°C
Z Package . . . . . . . . . . . . .		. . . . . . .	. . . . .
P, S Package . . . . . . . . . . .		. . . . . . .	. . . . .	–65°C to +150°C
Operating Temperature Range				–55°C to +125°C
BUF04Z . . . . . . . . . . . . . .		. . . . . . .	. . . . .
BUF04S, P . . . . . . . . . . . .		. . . . . . .	. . . . . .	–40°C to +85°C
Junction Temperature Range				–65°C to +150°C
Z Package . . . . . . . . . . . . .		. . . . . . .	. . . . .
P, S Package . . . . . . . . . . .		. . . . . . .	. . . . .	–65°C to +150°C
Lead Temperature Range (Soldering 60 sec) .				. . . .	. . . +300°C
Package Type		θJA2	θJC		Units
8-Pin Cerdip (Z)		148	16		°C/W
8-Pin Plastic DIP (P)		103	43		°C/W
8-Pin SOIC (S)		158	43		°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit board for SOIC package.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
BUF04AZ/883	–55°C to +125°C	Cerdip	Q-8
BUF04GP	–40°C to +85°C	Plastic DIP	N-8
BUF04GS	–40°C to +85°C	SO	SO-8
BUF04GBC	+25°C	DICE	DICE

DICE CHARACTERISTICS

BUF04 Die Size 0.075 x 0.064 inch, 5,280 Sq. Mils Substrate (Die Backside) Is Connected to V+ Transistor Count 45.

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Typical Performance Characteristics–BUF04

150

VS = ±15V

120 315 PLASTIC DIPS TA = +25°C

90
UNITS
60
30
0
–0.1		0.0		0.1		0.2		0.3		0.4		0.5		0.6

OFFSET – mV

Figure 1. Input Offset Voltage (VOS) Distribution @

±15 V, P-DIP

125

VS = ±5V

100

315 PLASTIC DIPS TA = +25°C

75

UNITS

50

25

0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

OFFSET – mV

Figure 2. Input Offset Voltage (VOS) Distribution @

±5 V, P-DIP
	2.0
	1.0
						±5V
	0		±15V
mV–	–1.0
OFFSET	–2.0
	–3.0
	–4.0
	–5.0
	–6.0
	–75	–50	–25	0	25	50	75	100	125
				TEMPERATURE – °C

Figure 3. Input Offset Voltage (VOS) vs. Temperature

200

VS = ±15V 160 315 CERDIPS

TA = +25°C

120
UNITS
80
40
0
–0.15		–0.1	–0.5	0	0.5	0.1	0.15	0.2

OFFSET – mV

Figure 4. Input Offset Voltage (VOS) Distribution @

±15 V, Cerdip

125

VS = ±5V

315 CERDIPS

100

TA = +25°C

75

UNITS

50

25

0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

OFFSET – mV

Figure 5. Input Offset Voltage (VOS) Distribution @

±5 V, Cerdip

	0
								VS = ±5V
	–1.0
µA–				VS = ±15V
	–2.0
CURRENT
	–3.0
BIAS	–4.0
INPUT
	–5.0
	–6.0
	–75	–50	–25	0	25	50	75	100	125
				TEMPERATURE – °C

Figure 6. Input Bias Current vs. Temperature

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