Analog Devices AMP01NBS, AMP01GS-REEL, AMP01GS, AMP01GBC, AMP01FX Datasheet

a	Low Noise, Precision
	Instrumentation Amplifier

FEATURES

Low Offset Voltage: 50 mV Max

Very Low Offset Voltage Drift: 0.3 mV/8C Max Low Noise: 0.12 mV p-p (0.1 Hz to 10 Hz) Excellent Output Drive: 610 V at 650 mA Capacitive Load Stability: to 1 mF

Gain Range: 0.1 to 10,000

Excellent Linearity: 16-Bit at G = 1000 High CMR: 125 dB min (G = 1000) Low Bias Current: 4 nA Max

May Be Configured as a Precision Op Amp Output-Stage Thermal Shutdown Available in Die Form

GENERAL DESCRIPTION

The AMP01 is a monolithic instrumentation amplifier designed for high-precision data acquisition and instrumentation applications. The design combines the conventional features of an instrumentation amplifier with a high current output stage. The output remains stable with high capacitance loads (1 µF), a unique ability for an instrumentation amplifier. Consequently, the AMP01 can amplify low level signals for transmission through long cables without requiring an output buffer. The output stage may be configured as a voltage or current generator.

Input offset voltage is very low (20 µV), which generally eliminates the external null potentiometer. Temperature changes have minimal effect on offset; TCVIOS is typically 0.15 µV/°C. Excellent low-frequency noise performance is achieved with a minimal compromise on input protection. Bias current is very low, less than 10 nA over the military temperature range. High common-mode rejection of 130 dB, 16-bit linearity at a gain of 1000, and 50 mA peak output current are achievable simultaneously. This combination takes the instrumentation amplifier one step further towards the ideal amplifier.

AC performance complements the superb dc specifications. The AMP01 slews at 4.5 V/µs into capacitive loads of up to 15 nF, settles in 50 µs to 0.01% at a gain of 1000, and boasts a healthy 26 MHz gain-bandwidth product. These features make the AMP01 ideal for high speed data acquisition systems.

Gain is set by the ratio of two external resistors over a range of 0.1 to 10,000. A very low gain temperature coefficient of 10 ppm/°C is achievable over the whole gain range. Output voltage swing is guaranteed with three load resistances; 50 Ω, 500 Ω, and 2 kΩ. Loaded with 500 Ω, the output delivers

± 13.0 V minimum. A thermal shutdown circuit prevents destruction of the output transistors during overload conditions.

The AMP01 can also be configured as a high performance operational amplifier. In many applications, the AMP01 can be used in place of op amp/power-buffer combinations.

REV. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

AMP01*

PIN CONFIGURATIONS

18-Lead Cerdip

RG	1	18	+IN
RG	2	17	VIOS NULL
–IN 3		16	VIOS NULL
VOOS NULL	4	15	RS
VOOS NULL	5	14	RS
TEST PIN*	6	13	+VOP
SENSE	7	12	V+
REFERENCE	8	11	V–
OUTPUT	9	10	–V
		AMP01	OP

TOP VIEW (Not to Scale)

*MAKE NO ELECTRICAL CONNECTION

AMP01 BTC/883

28-Terminal LCC

NULL

–IN

G

G

NC

+IN

NC

IOS

R

R

V

4

3

2

1

28

27

26

NC 5

25 VIOS NULL

VOOS NULL 6

24 NC

NC 7

AMP01

23 RS

VOOS NULL

8

TOP VIEW

22 RS

NC

9

(Not to Scale)

21 +VOP

TEST PIN* 10

20 NC

NC 11

19 V+

12

13

14

15

16

17

18

SENSE

REF

OUT

NC

–V

NC

V–

NC = NO CONNECT

OP

*MAKE NO ELECTRICAL CONNECTION

20-Lead SOIC

RG

RG

1

20

TEST PIN*

TEST PIN*

2

19

–IN

+IN

3

18

VOOS NULL

VIOS NULL

4

17

VOOS NULL

AMP01

VIOS NULL

5

16

TEST PIN*

TOP VIEW

RS

6

15

(Not to Scale)

SENSE

RS

7

14

REFERENCE

+VOP

8

13

OUTPUT

V+

9

12

–V

V–

10

11

OP

*MAKE NO ELECTRICAL CONNECTION

*Protected under U.S. Patent Numbers 4,471,321 and 4,503,381.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 1999

AMP01–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)

				AMP01A			AMP01B
Parameter	Symbol	Conditions		Min	Typ	Max	Min	Typ	Max	Units
OFFSET VOLTAGE		TA = +25°C			20	50		40	100	µV
Input Offset Voltage	VIOS
		–55°C ≤ TA	≤ +125°C		40	80		60	150	µV
Input Offset Voltage Drift	TCVIOS	–55°C ≤ TA	≤ +125°C		0.15	0.3		0.3	1.0	µV/°C
Output Offset Voltage	VOOS	TA = +25°C			1	3		2	6	mV
		–55°C ≤ TA ≤ +125°C			3	6		6	10	mV
Output Offset Voltage Drift	TCVOOS	RG = ∞
		–55°C ≤ TA ≤ +125°C			20	50		50	120	µV/°C
Offset Referred to Input	PSR	G = 1000		120	130		110	120		dB
vs. Positive Supply		G = 100		110	130		100	120		dB
V+ = +5 V to +15 V		G = 10		95	110		90	100		dB
		G = 1		75	90		70	80		dB
		–55°C ≤ TA ≤ +125°C
		G = 1000		120	130		110	120		dB
		G = 100		110	130		100	120		dB
		G = 10		95	110		90	100		dB
		G = 1		75	90		70	80		dB
Offset Referred to Input	PSR	G = 1000		105	125		105	115		dB
vs. Negative Supply		G = 100		90	105		90	95		dB
V– = –5 V to –15 V		G = 10		70	85		70	75		dB
		G = 1		50	65		50	60		dB
		–55°C ≤ TA ≤ +125°C
		G = 1000		105	125		105	115		dB
		G = 100		90	105		90	95		dB
		G = 10		70	85		70	75		dB
Input Offset Voltage Trim		G = 1		50	85		50	60		dB
		VS = ± 4.5 V to ± 18 V1			± 6			± 6		mV
Range
Output Offset Voltage Trim		VS = ± 4.5 V to ± 18 V1			± 100			± 100
Range										mV
INPUT CURRENT		TA = +25°C			1	4		2	6	nA
Input Bias Current	IB		≤ +125°C
		–55°C ≤ TA			4	10		6	15	nA
Input Bias Current Drift	TCIB	–55°C ≤ TA	≤ +125°C		40			50		pA/°C
Input Offset Current	IOS	TA = +25°C	≤ +125°C		0.2	1.0		0.5	2.0	nA
		–55°C ≤ TA			0.5	3.0		1.0	6.0	nA
Input Offset Current Drift	TCIOS	–55°C ≤ TA	≤ +125°C		3			5		pA/°C
INPUT		Differential, G = 1000			1			1		GΩ
Input Resistance	RIN
		Differential, G ≤ 100			10			10		GΩ
		Common Mode, G = 1000			20			20		GΩ
Input Voltage Range	IVR	TA = +25°C2		± 10.5			± 10.5			V
		–55°C ≤ TA ≤ +125°C		± 10.0			± 10.0			V
Common-Mode Rejection	CMR	VCM = ± 10 V, 1 kΩ
		Source Imbalance
		G = 1000		125	130		115	125		dB
		G = 100		120	130		110	125		dB
		G = 10		100	120		95	110		dB
		G = 1		85	100		75	90		dB
		–55°C ≤ TA ≤ +125°C
		G = 1000		120	125		110	120		dB
		G = 100		115	125		105	120		dB
		G = 10		95	115		90	105		dB
		G = 1		80	95		75	90		dB

NOTES

1VIOS and VOOS nulling has minimal affect on TCVIOS and TCVOOS respectively. 2Refer to section on common-mode rejection.

Specifications subject to change without notice.

–2–

REV. D

										AMP01
		(@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, –258C ≤ TA ≤ +858C for E, F
ELECTRICAL CHARACTERISTICS grades, 08C ≤ TA ≤ +708C for G grade, unless otherwise noted)
				AMP01E			AMP01F/G
Parameter	Symbol	Conditions		Min	Typ	Max	Min	Typ	Max		Units
OFFSET VOLTAGE		TA = +25°C			20	50		40	100		µV
Input Offset Voltage	VIOS
		TMIN ≤ TA ≤ TMAX			40	80		60	150		µV
Input Offset Voltage Drift	TCVIOS		1		0.15	0.3		0.3	1.0		µV/°C
		TMIN ≤ TA ≤ TMAX
Output Offset Voltage	VOOS	TA = +25°C			1	3		2	6		mV
		TMIN ≤ TA ≤ TMAX			3	6		6	10		mV
Output Offset Voltage Drift	TCVOOS	RG = ∞1
		TMIN ≤ TA ≤ TMAX			20	100		50	120		µV/°C
Offset Referred to Input	PSR	G = 1000		120	130		110	120			dB
vs. Positive Supply		G = 100		110	130		100	120			dB
V+ = +5 V to +15 V		G = 10		95	110		90	100			dB
		G = 1		75	90		70	80			dB
		TMIN ≤ TA ≤ TMAX
		G = 1000		120	130		110	120			dB
		G = 100		110	130		100	120			dB
		G = 10		95	110		90	100			dB
		G = 1		75	90		70	80			dB
Offset Referred to Input	PSR	G = 1000		110	125		105	115			dB
vs. Negative Supply		G = 100		95	105		90	95			dB
V– = –5 V to –15 V		G = 10		75	85		70	75			dB
		G = 1		55	65		50	60			dB
		TMIN ≤ TA ≤ TMAX
		G = 1000		110	125		105	115			dB
		G = 100		95	105		90	95			dB
		G = 10		75	85		70	75			dB
Input Offset Voltage Trim		G = 1		55	85		50	60			dB
		VS = ± 4.5 V to ± 18 V2			± 6			± 6			mV
Range
Output Offset Voltage Trim		VS = ± 4.5 V to ± 18 V2			± 100			± 100
Range											mV
INPUT CURRENT		TA = +25°C			1	4		2	6		mV
Input Bias Current	IB
		TMIN ≤ TA	≤ TMAX		4	10		6	15		mV
Input Bias Current Drift	TCIB	TMIN ≤ TA	≤ TMAX		40			50			pA/°C
Input Offset Current	IOS	TA = +25°C			0.2	1.0		0.5	2.0		mV
		TMIN ≤ TA	≤ TMAX		0.5	3.0		1.0	6.0		mV
Input Offset Current Drift	TCIOS	TMIN ≤ TA	≤ TMAX		3			5			pA/°C
INPUT		Differential, G = 1000			1			1			GΩ
Input Resistance	RIN
		Differential, G ≤ 100			10			10			GΩ
		Common Mode, G = 1000			20			20			GΩ
Input Voltage Range	IVR	TA = +25°C3		± 10.5			± 10.5				V
		TMIN ≤ TA ≤ TMAX		± 10.0			± 10.0				V
Common-Mode Rejection	CMR	VCM = ± 10 V, 1 kΩ
		Source Imbalance
		G = 1000		125	130		115	125			dB
		G = 100		120	130		110	125			dB
		G = 10		100	120		95	110			dB
		G = 1		85	100		75	90			dB
		TMIN ≤ TA ≤ TMAX
		G = 1000		120	125		110	120			dB
		G = 100		115	125		105	120			dB
		G = 10		95	115		90	105			dB
		G = 1		80	95		75	90			dB

NOTES 1Sample tested.

2VIOS and VOOS nulling has minimal affect on TCVIOS and TCVOOS, respectively. 3Refer to section on common-mode rejection.

Specifications subject to change without notice.

REV. D

–3–

AMP01

ELECTRICAL CHARACTERISTICS

(@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)

AMP01A/E

AMP01B/F/G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Units

GAIN

20 × RS

Gain Equation Accuracy

G =

0.3

0.6

0.5

0.8

%

RG

Accuracy Measured

Gain Range

G

from G = 1 to 1000

0.1

10k

0.1

10k

V/V

G = 10001

Nonlinearity

0.0007 0.005

0.0007 0.005

%

G = 1001

0.005

0.005

%

G = 101

0.005

0.007

%

G = 11

0.010

0.015

%

Temperature Coefficient

GTC

1 ≤ G ≤ 10001, 2

5

10

5

15

ppm°C

OUTPUT RATING

RL = 2 kΩ

± 13.0

± 13.8

± 13.0

± 13.8

V

Output Voltage Swing

VOUT

RL = 500 Ω

± 13.0

± 13.5

± 13.0

± 13.5

V

RL = 50 Ω

± 2.5

± 4.0

± 2.5

± 4.0

V

RL = 2 kΩ Over Temp.

± 12.0

± 13.8

± 12.0

± 13.8

V

RL = 500 Ω3

± 12.0

± 13.5

± 12.0

± 13.5

V

Positive Current Limit

Output-to-Ground Short

60

100

120

60

100

120

mA

Negative Current Limit

Output-to-Ground Short

60

90

120

60

90

120

mA

Capacitive Load Stability

1 ≤ G ≤ 1000

µF

Thermal Shutdown

No Oscillations1

0.1

1

0.1

1

°C

Temperature

Junction Temperature

165

165

NOISE

fO = 1 kHz

Voltage Density, RTI

en

nV/√Hz

en

G = 1000

5

5

en

G = 100

10

10

nV/√Hz

en

G = 10

59

59

nV/√Hz

en

G = 1

540

540

nV/√Hz

Noise Current Density, RTI

in

fO = 1 kHz, G = 1000

0.15

0.15

pA/√Hz

Input Noise Voltage

en p-p

0.1 Hz to 10 Hz

µV p-p

en p-p

G = 1000

0.12

0.12

en p-p

G = 100

0.16

0.16

µV p-p

en p-p

G = 10

1.4

1.4

µV p-p

en p-p

G = 1

13

13

µV p-p

Input Noise Current

in p-p

0.1 Hz to 10 Hz, G = 1000

2

2

pA p-p

DYNAMIC RESPONSE

Small-Signal

G = 1

570

570

kHz

Bandwidth (–3 dB)

BW

G = 10

100

100

kHz

G = 100

82

82

kHz

G = 1000

26

26

kHz

Slew Rate

SR

G = 10

3.5

4.5

3.0

4.5

V/µs

Settling Time

tS

To 0.01%, 20 V step

µs

G = 1

12

12

G = 10

13

13

µs

G = 100

15

15

µs

G = 1000

50

50

µs

NOTES

1Guaranteed by design.

2Gain tempco does not include the effects of gain and scale resistor tempco match.

3–55°C ≤ TA ≤ +125°C for A/B grades, –25°C ≤ TA ≤ +85°C for E/F grades, 0°C ≤ TA ≤ 70°C for G grades. Specifications subject to change without notice.

–4–

REV. D

ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)

AMP01

AMP01A/E

AMP01B/F/G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Units

SENSE INPUT

35

50

65

35

50

65

kΩ

Input Resistance

RIN

Input Current

IIN

Referenced to V–

280

280

µA

Voltage Range

(Note 1)

–10.5

+15

–10.5

+15

V

REFERENCE INPUT

35

50

65

35

50

65

kΩ

Input Resistance

RIN

Input Current

IIN

Referenced to V–

280

280

µA

Voltage Range

(Note 1)

–10.5

+15

–10.5

+15

V

Gain to Output

1

1

V/V

POWER SUPPLY –25°C ≤ TA ≤ +85°C for E/F Grades, –55°C ≤ TA ≤ +125°C for A/B Grades

Supply Voltage Range

VS

+V linked to +VOP

± 4.5

± 18

± 4.5

± 18

V

VS

–V linked to –VOP

± 4.5

± 18

± 4.5

± 18

V

Quiescent Current

IQ

+V linked to +VOP

3.0

4.8

3.0

4.8

mA

IQ

–V linked to –VOP

3.4

4.8

3.4

4.8

mA

NOTE

1Guaranteed by design.

Specifications subject to change without notice.

ORDERING GUIDE

Model

Temperature Range

Package Description

Package Option

AMP01AX

–55°C to +125°C

18-Lead Cerdip

Q-18

AMP01AX/883C

–55°C to +125°C

18-Lead Cerdip

Q-18

AMP01BTC/883C

–55°C to +125°C

28-Terminal LCC

E-28A

AMP01BX

–55°C to +125°C

18-Lead Cerdip

Q-18

AMP01BX/883C

–55°C to +125°C

18-Lead Cerdip

Q-18

AMP01EX

–25°C to +85°C

18-Lead Cerdip

Q-18

AMP01FX

–25°C to +85°C

18-Lead Cerdip

Q-18

AMP01GBC

0°C to +70°C

Die

AMP01GS

20-Lead SOIC

R-20

AMP01GS-REEL

0°C to +70°C

13" Tape and Reel

R-20

AMP01NBC

–55°C to +125°C

Die

5962-8863001VA*

18-Lead Cerdip

Q-18

5962-88630023A*

–55°C to +125°C

28-Terminal LCC

E-28A

5962-8863002VA*

–55°C to +125°C

18-Lead Cerdip

Q-18

*Standard military drawing available.

DICE CHARACTERISTICS

Die Size 0.111 × 0.149 inch, 16,539 sq. mils (2.82 × 3.78 mm, 10.67 sq. mm)

	1.	RG	10.	V– (OUTPUT)
	2.	RG	11.	V–
	3.	–INPUT	12.	V+
			13.	V+ (OUTPUT)
	4.	VOOS NULL
			14.	RS
	5.	VOOS NULL
			15.	RS
	6.	TEST PIN*
			16.	VIOS NULL
	7.	SENSE
	8.	REFERENCE	17.	VIOS NULL
	9.	OUTPUT	18.	+INPUT

* MAKE NO ELECTRICAL CONNECTION

REV. D

–5–

AMP01

WAFER TEST LIMITS

(@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)

						AMP01NBC	AMP01GBC
Parameter	Symbol	Conditions				Limit	Limit	Units
Input Offset Voltage	VIOS					60	120	µV max
Output Offset Voltage	VOOS					4	8	mV max
Offset Referred to Input	PSR	V+ = +5 V to +15 V						dB min
vs. Positive Supply		G = 1000				120	110	dB min
		G = 100				110	100	dB min
		G = 10				95	90	dB min
		G = 1				75	70	dB min
Offset Referred to Input	PSR	V– = –5 V to –15 V						dB min
vs. Negative Supply		G = 1000				105	105	dB min
		G = 100				90	90	dB min
		G = 10				70	70	dB min
		G = 1				50	50	dB min
Input Bias Current	IB					4	8	nA max
Input Offset Current	IOS					1	3	nA max
Input Voltage Range	IVR	Guaranteed by CMR Tests				± 10	± 10	V min
Common Mode Rejection	CMR	VCM = ± 10 V						dB min
		G = 1000				125	115	dB min
		G = 100				120	110	dB min
		G = 10				100	95	dB min
		G = 1				85	75	dB min
Gain Equation Accuracy		G =	20 × RS			0.6	0.8	% max
				RG
Output Voltage Swing	VOUT	RL = 2 kΩ				± 13	± 13	V min
	VOUT	RL = 500 Ω				± 13	± 13	V min
	VOUT	RL = 50 Ω				± 2.5	± 2.5	V min
Output Current Limit		Output to Ground Short				± 60	± 60	mA min
Output Current Limit		Output to Ground Short				± 120	± 120	mA max
Quiescent Current	IQ	+V Linked to +VOP				4.8	4.8	mA max
		–V Linked to –VOP				4.8	4.8	mA max

NOTE

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

			V+
	VIOS		+VOP
	NULL
		A1	OUTPUT
250V			–V
–IN
			OP
250V
+IN	Q1	Q2
REFERENCE
R1
47.5kV	RGAIN		R3
			47.5kV
			SENSE
A2		A3
	RSCALE
R2	VOOS		R4
2.5kV	NULL		2.5kV
			V–

Figure 1. Simplified Schematic

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP01 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–6–

REV. D

					AMP01
ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)
			AMP01NBC	AMP01GBC
Parameter	Symbol	Conditions	Typical	Typical	Units
Input Offset Voltage Drift	TCVIOS	RG = ∞	0.15	0.30	V/°C
Output Offset Voltage Drift	TCVOOS		20	50	V/°C
Input Bias Current Drift	TCIB		40	50	pA/°C
Input Offset Current Drift	TCIOS		3	5	pA/°C
Nonlinearity		G = 1000	0.0007	0.0007	%
Voltage Noise Density	en	G = 1000			nV/√Hz
	in	fO = 1 kHz	5	5
Current Noise Density		G = 1000			pA/√Hz
	en p-p	fO = 1 kHz	0.15	0.15
Voltage Noise		G = 1000			V p-p
		0.1 Hz to 10 Hz	0.12	0.12
Current Noise	in p-p	G = 1000	2	2	pA p-p
		0.1 Hz to 10 Hz
Small-Signal Bandwidth (–3 dB)	BW	G = 1000	26	26	kHz
Slew Rate	SR	G = 10	4.5	4.5	V/ s
Settling Time	tS	To 0.01%, 20 V Step			s
		G = 1000	50	50

NOTE

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

REV. D

–7–