Analog Microelectronics AME8816CEHAADJ, AME8816BEHAADJ, AME8816BEDVADJ, AME8816AEHA500, AME8816AEHA475 Datasheet

AME, Inc.

AME8816

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n General Description

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The AME8816 family of positive, linear regulators feature low quiescent current (45µA typ.) with low dropout voltage, making them ideal for battery applications.

Output voltages are set at the factory and trimmed to

1.5% accuracy. These rugged devices have both Thermal Shutdown,

and Current Fold-back to prevent device failure under the "Worst" of operating conditions.

In applications requiring a low noise, regulated supply, place a 1000pF capacitor between Bypass and Ground.

The AME8816 is stable with an output capacitance of

4.7µF or greater .

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n Features

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1.5A CMOS LDO

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nFunctional Block Diagram

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(Fixed Versions)

Overcurrent

Shutdown

BYPASS

1.242V

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nFunctional Block Diagram

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Thermal

Shutdown

AMP

OUTIN

R1

EN

R2

GND

l Very Low Dropout Voltage l Guaranteed 1.5A Output l Accurate to within 1.5% l 45µA Quiescent Current Typically l Over-Temperature Shutdown l Current Limiting l Short Circuit Current Fold-back l Noise Reduction Bypass Capacitor (Fixed

Versions)

l Power-Saving Shutdown Mode l Space-Saving DDPAK-5 Package l 6 Factory Pre-set Output Voltages

l Low Temperature Coef ficient

l Adjustable Version

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n Applications

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l Instrumentation l Portable Electronics l Wireless Devices l PC Peripherals l Battery Powered Widgets

(Adjustable Version)

IN

Overcurrent

Shutdown

1.242V

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n T ypical Application

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IN

C1

5V

1µF

C2

1nF

Thermal

Shutdown

AMP

IN

BYP

AME8816

OUT

GND

EN

OUT

EN

ADJ

R1

(external)

R2

(external)

GND

OUT

C3

4.7µ

F

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AME, Inc.

AME8816

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n Pin Configuration

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AME8816 AEDVXXX YYWW

12345

TO-263(DDPAK-5) Top View

1. EN

2. V

IN

3. GND

4. V

OUT

5. BYP

AME8816 BEDV ADJ YYWW

12345

SO-8 Top View

1.5A CMOS LDO

1. EN

2. V

IN

3. GND

4. V

OUT

5. ADJ

8

7

6

5

1. ADJ

2. GND

3. GND

4. EN

5. V

IN

6. GND

7. GND

8. V

OUT

1

O

8

2. GND

1

O

3. GND

1. BYP

2

8816 AEHAXXX

3

4

YYWW

7

6

4. EN

5. V

IN

6. GND

5

7. GND

8. V

OUT

2

3

4

8816 BEHAADJ YYWW

1. EN

1

2

O

8816 CEHAADJ

3

4

YYWW

8

2. V

IN

3. V

7

6

OUT

4. ADJ

5. GND

6. GND

7. GND

5

8. GND

2

AME, Inc.

AME8816

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AME8816 Ordering Information

1.5A CMOS LDO

Package Type

V

OUT

DDPAK-5 SO-8

1.50 AM E 8816A EDV150 AM E 8816A EHA150

1.80 AM E 8816A EDV180 AM E 8816A EHA180

2.50 AM E 8816A EDV250 AM E 8816A EHA250

3.30 AM E 8816A EDV330 AM E 8816A EHA330

4.75 AM E 8816A EDV475 AM E 8816A EHA475

5.00 AM E 8816A EDV500 AM E 8816A EHA500 ADJ AME8816B EDVA DJ AM E 8816B EHAA DJ

ADJ AM E 8816CE HA A DJ Please c ons ult A ME sal es office or authorized Rep./ Distr. F or ot her out put voltage and pack age t ype or pinout availabili t y.

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AME, Inc.

AME8816

Absolute Maximum Ratings:

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Parameter Maximum Unit

Inpu t Vo l ta ge 8 V

Output Current

Output V olt age GND - 0.3 to V

ESD Class i fic at i on B

Caution: S t res s above the lis t ed abs olut e m aximum rati ng may c aus e permanent damage t o t he device.

Recommended operating Conditions:

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Parameter Rating Un it

Am bient Temperature Range -40 to +85

PD / (VIN - VO)

+ 0.3 V

IN

1.5A CMOS LDO

mA

o

C

Junction Temperature -40 to +125

Thermal Information

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Parame ter

TO-263 (DDPAK -5) 5

Thermal Resistance (

Internal Power Diss ipat ion (P

o

(∆T = 100

Max im um Junct i on Temperature

Max im um Lead Temperature ( 10 Sec)

C)*

)

θ

jc

)

D

SO-8 20**

TO-263 (DDPAK -5) 3.00

SO-8 2.50

o

C

Maximum Unit

o

C / W

W

150

300

o

C

o

C

* As s um ing a heat s ink c apable of twice t imes (

** Estimated

4

)

θ

jc

AME, Inc.

AME8816

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n Electrical Specifications

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V

= V

IN

Input Voltage V Output Voltage Accuracy V

Dropout Voltage V

Output C urrent I Current Limit I Short Circuit Current I Quiescent Current I M inimun Load Current

(For ADJ Option) Ground Pin Current I

Line Regulation RE G

Load Regulation RE G

+2V, VEN = VIN, TA = 25oC unless otherwise noted

O(nom)

Para mete r Symb ol Min Typ Ma x Units

IN

O

DROPOUT

O

LIM

SC

Q

I

MIN

GND

LINE

LOAD

IO=1.5A

V

O=VONOM

IO=1mA

V

IN=VO

Te st Condition

V

= VEHmin, IO=1mA

EN

-2.0%

V

O

V

O

V

O

I

O

=1m A to 1.5A

I

O

+1 to VO+2

I

=1m A to 1.5A

O

1.5V < V

2.0V <V

>1.2V >1.2V <0.4V =0mA

Note 1 7 V

-1.5 1. 5 %

<= 2.0V 1300

O(NOM)

<= 2.8V 800

O(NOM)

2.8V <V

O(NOM)

1500 m A 1500 2000 m A

< 2.0V -0.15 0.15 %

V

O

4.0 > V

>= 2.0V -0.1 0.02 0.1 %

O

4.0V <= V

O

-0.4 0. 4 %

1.5A CMOS LDO

See

chart

750 m A

1mA

-1 0. 2 1 %

Over Temerature Shut down OTS 150

Over Temerature Hys terisis OTH 30

Temperature Coefficient TC 30

V

O

AD J Input Bias C urrent I AD J Reference V oltage V

ADJ

REF

V

= 5V , V

IN

= 1.24 2V

ADJ

1.223 1.242 1.261 V

f=1kHz 50

I

=100mA

Pow er Supply Rejec tion

PS RR f=10kHz 20 dB

PS RR f=10kHz 55 dB

Output V oltage Nois e eN

O

=4.7µF ceramic

C

O

I

=100mA

O

=4.7µF ceramic

C

O

=0.01µF

C

BY P

f=10Hz t o 100k Hz

I

=10mA ,C

O

BY P

=0µF

f=100kHz 15

f=1kHz 75

f=100kHz 30

Co=4.7µF30

600

45 70

45

1

mV

µ

o

ppm /

µ

Vrms

µ

A

C C

o

C

A

Output V oltage Nois e eN

EN Input Threshold

EN Input Bias Current

Shut down S upply Current I Note1.V Note2.V

IN(min)=VOUT+VDROPOUT

O(nom) :

nom inal output voltage of fixed version

V

I

EH

I

EL

SD

EH

EL

f=10Hz t o 100k Hz

I

=10mA ,C

O

BY P

=0.01µF

V

= 5V , VO=0V, VEN=0V

IN

VIN= 7V

=0V, VIN= 7V

EN

Co=4.7µF30

Vrms

µ

2.0 Vin V

00.4V

0.1

0.5

0.5 2

A

µ

A

µ

A

µ

5