Datasheet APT33GF120LRD, APT33GF120B2RD Datasheet (Advanced Power Technology APT)

APT33GF120B2RD

APT33GF120LRD

1200V 52A

APT33GF120B2RD

Fast IGBT & FRED

The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-

T-Max

(B2RD)

™

TO-264

(LRD)

Punch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior

ruggedness and fast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

G

C

E

G

C

APT33GF120LRD

E

C

• Low Tail Current • Ultra Low Leakage Current

• RBSOA and SCSOA Rated

• Ultrafast Soft Recovery Antiparallel Diode

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

I

C1

I

C2

I

CM1

I

CM2

P

TJ,T

T

Parameter

Collector-Emitter Voltage Collector-Gate Voltage (R Gate-Emitter Voltage

GE

Continuous Collector Current @ TC = 25°C Continuous Collector Current @ T Pulsed Collector Current Pulsed Collector Current Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KΩ)

GE

= 90°C

C

1

@ TC = 25°C

1

@ TC = 90°C

G

E

APT33GF120B2RD/LRD

1200 1200

±20

52 33

104

66

300

-55 to 150 300

UNIT

Volts

Amps

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 5 56 47 97 61

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C) Collector Cut-off Current (V Collector Cut-off Current (VCE = V Gate-Emitter Leakage Current (VGE = ±20V, V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

APT Website - http://www.advancedpower.com

= 0V, IC = 0.5mA)

GE

, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 125°C)

= 0V)

CE

2

MIN TYP MAX

1200

4.5 5.5 6.5

2.7 3.2

3.3 3.9

0.5

5.0

±100

UNIT

Volts

mA

nA

052-6254 Rev A

DYNAMIC CHARACTERISTICS (IGBT) APT33GF120B2RD/LRD

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy

4

Turn-off Switching Energy Total Switching Losses

4

Turn-on Delay Time Rise Time

PRELIMINARY

Turn-off Delay Time Fall Time Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

RG =10Ω

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +150°C

J

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= I

C

C2

R

= 10Ω

G

T

= +25°C

J

V

= 20V, I

CE

= 25A

C

CES

°C)

CES

MIN TYP MAX

1650 2200

230 325 110 160

165 250

20 30

100 150

30 140 155 200

28

60 280

30

3.0

6.0 28 70

250

25

5.0

8.5 20

UNIT

pF

nC

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Leakages include the FRED and IGBT.

3

See MIL-STD-750 Method 3471

4

Switching losses include the FRED and IGBT.

052-6254 Rev A

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient

Package Weight

T

Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

MIN TYP MAX

0.42

0.90 40

0.22

6.1 10

1.1

UNIT

°C/W

oz

gm lb•in N•m

APT33GF120B2RD/LRD

PRELIMINARY

Power dissipation

P

parameter:

P

tot

T

tot

= ƒ(

)

C

≤

T

150 °C

j

320

W

240

200

160

120

80

40

0

0 20 40 60 80 100 120 °C 160

Collector current

I

T

= ƒ(

C

parameter:

I

C

T

C

)

C

≥

V

15 V ,

GE

55

A

45

40

35

30

25

20

15

10

5 0

0 20 40 60 80 100 120 °C 160

T

j

≤

150 °C

T

C

Safe operating area

I

V

= ƒ(

C

parameter:

I

C

10

A

)

CE

D

, T

= 0

C

3

2

1

0

-1

10

0

10

1

= 25°C ,

10

Transient thermal impedance IGBT

Z

th JC

≤

T

150 °C

j

t

= 2.0µs

p

10 µs

100 µs

1 ms

10 ms

DC

2

10

3

V

CE

parameter:

Z

thJC

= ƒ(

10

K/W

10

0

-1

-2

-3

10

t

p

-5

)

D = t

T

/

p

single pulse

-4

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

10

-2

10

-1

10 0 s

t

p

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 5 56 47 97 61

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

052-6254 Rev A

APT33GF120B2RD/LRD

PRELIMINARY

Typ. output characteristics

=

I

C

parameter:

I

C

)

f (V

CE

= 80 µs,

t

p

55

A

17V

45

40

35

30

25

20

15

10

15V 13V 11V 9V 7V

5 0

1.0 1.5 2.0 2.5 3.0 3.5

0 2 4 6 V 10

= 25 °C

T

j

Typ. output characteristics

IC = f (V

parameter:

I

C

V

CE

)

CE

= 80 µs,

t

p

55

A

17V

45

40

35

30

25

20

15

10

15V 13V 11V 9V 7V

5 0

2.0 2.5 3.0 3.5 4.0 4.5

0 2 4 6 V 10

= 125 °C

T

j

V

CE

Typ. transfer characteristics

= f (

I

C

parameter:

I

C

)

V

GE

=80µs,

t

p

60

A 50 45 40 35 30 25 20 15 10

5 0

0 2 4 6 8 10 V 14

V

CE

=20 V

V

GE

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

052-6254 Rev A

Typ. gate charge

V

GE

parameter:

= ƒ(

20

Q

Gate

I

C puls

)

26A

= 25 A

Typ. capacitances

C = f (V

parameter:

10

CE

1

)

V

= 0 V, f = 1 MHz

GE

V

16

V

GE

14

12

10

8

6

4

2 0

0 20 40 60 80 100 120 140 170

Short circuit safe operating area

I

f (V

=

Csc

parameter:

10

CE

V

T

) ,

= 150°C

j

= ± 15 V,

GE

t

≤ 10 µs, L < 25 nH

sc

nF

C

800 V600 V

Q

Gate

0

10

-1

10

-2

10

0 5 10 15 20 25 30 V 40

V

C

Ciss

ies

Coss

C

oes

C

Crss

res

CE

Reverse biased safe operating area

I

= f (VCE) ,

Cpuls

parameter:

2.5

V

GE

T

= 150°C

j

= 15 V

I

Csc

I

/

C(90°C)

6

4

2

0

0 200 400 600 800 1000 1200 V 1600

I

Cpuls

V

CE

I

/

C

1.5

1.0

0.5

0.0 0 200 400 600 800 1000 1200 V 1600

V

CE

APT33GF120B2RD/LRD

ULTRAFAST SOFT RECOVERY PARALLEL DIODE

MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

RRM

V

RWM

IF(AV)

(RMS)

I

F

I

FSM

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

R

Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (T RMS Forward Current Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

= 85°C, Duty Cycle = 0.5)

C

STATIC ELECTRICAL CHARACTERISTICS (FRED)

Symbol

V

Characteristic / Test Conditions

Maximum Forward Voltage I

F

I

F

IF = 30A, TJ = 150°C

= 30A = 60A

APT33GF120B2RD/LRD

1200

30 70

210

MIN TYP MAX

2.5

2.0

UNIT

Volts

Amps

UNIT

Volts

DYNAMIC CHARACTERISTICS (FRED)

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I Reverse Recovery Time TJ = 25°C

= 30A, diF/dt = -240A/µs, VR = 650V TJ = 100°C

I

F

Forward Recovery Time TJ = 25°C

= 30A, diF/dt = 240A/µs, VR = 650V TJ = 100°C

I

F

Reverse Recovery Current T I

= 30A, diF/dt = -240A/µs, VR = 650V TJ = 100°C

F

Recovery Charge T I

= 30A, diF/dt = -240A/µs, VR = 650V TJ = 100°C

F

Forward Recovery Voltage T

= 30A, diF/dt = 240A/µs, VR = 650V TJ = 100°C

I

F

Rate of Fall of Recovery Current T I

= 30A, diF/dt = -240A /µs, VR = 650V (See Figure 10) TJ = 100°C

F

PRELIMINARY

= 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C

F

= 25°C

J

= 25°C

J

= 25°C

J

= 25°C

J

MIN TYP MAX

70 85

70 160 255 255

712

12 20 660

1640

15

20 245 160

UNIT

ns

Amps

nC

Volts

A/µs

052-6254 Rev A

100

80

60

40

, FORWARD CURRENT

F

20

TJ = 150°C

TJ = 100°C

TJ = 25°C

TJ = -55°C

APT33GF120B2RD/LRD

2400

2000

1600

1200

, REVERSE RECOVERY CHARGE

rr

800

400

TJ=100°C VR=650V

60A

30A

15A

0

0 1 2 3 4 10 50 100 500 1000

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

0

Figure 1, Forward Voltage Drop vs Forward Current Figure 2, Reverse Recovery Charge vs Current Slew Rate

2.0

1.6

1.2

I

0.8

, DYNAMIC PARAMETERS Q

f

0.4

RRM

t

rr

Q

rr

t

rr

Q

rr

0.0

, REVERSE RECOVERY CURRENT I

RRM

50

TJ=100°C VR=650V

40

30

30A

20

60A

15A

10

0

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

di

/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

F

Figure 3, Reverse Recovery Current vs Current Slew Rate Figure 4, Dynamic Parameters vs Junction Temperature

250

200

150

60A

30A

15A

TJ=100°C VR=650V

2000

1600

1200

TJ=100°C VR=650V

IF=30A

V

fr

100

80

60

, REVERSE RECOVERY TIME I

rr

Figure 5, Reverse Recovery Time vs Current Slew Rate Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate

(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)

, THERMAL IMPEDANCE t

ΘJC

Z

Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

052-6254 Rev A

100

PRELIMINARY

50

0

0 200 400 600 800 1000 0 200 400 600 800 1000

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

800

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

400

, FORWARD RECOVERY TIME K

fr

t

0

t

fr

1.0

0.5

D=0.5

0.2

0.1

0.05

0.01

0.005

0.001

-5

10

0.1

0.05

0.02

0.01 SINGLE PULSE

-4

10

-3

10

V

RECTANGULAR PULSE DURATION (SECONDS)

, REVERSE VOLTAGE (VOLTS)

R

-2

10

-1

10

NOTE:

DM

t

1

P

t

2

/

DUTY FACTOR D=t

=+

PEAK T P x Z T

DM JC

t

12

1.0 10

40

(VOLTS)

20

, FORWARD RECOVERY VOLTAGE

fr

V

0

CJ

30µH

APT33GF120B2RD/LRD

V

r

D.U.T.

t

Q

/

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 25, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

di

2

/dt - Current Slew Rate, Rate of Forward

F

Current Change Through Zero Crossing.

1

Zero

3

4

5 6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line

Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

PRELIMINARY

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

PRELIMINARY

Figure 8, Diode Reverse Recovery Waveform and Definitions

RRM

and trr.

F

6

{

diM/dt

RRM

.

TRANSFORMER

}

PEARSON 411

CURRENT

2

rr.

4

6

5

3

Q

rr

= 1/

0.75 I

2

(

0.5 I

RRM

t

rr

.

RRM

I

RRM

)

Collector

(Cathode)

052-6254 Rev A

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

21.46 (.845)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

2.21 (.087)

2.59 (.102)

4.50

(.177) Max.

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC 2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Collector

(Cathode) Emitter

(Anode)

Collector

(Cathode)

TO-264 Package OutlineT-MAX™ Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

25.48 (1.003)

26.49 (1.043)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)Dimensions in Millimeters and (Inches)

5.79 (.228)

6.20 (.244)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC 2-Plcs.

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate Collector

(Cathode) Emitter

(Anode)