2N 2N3055, MJ2955 Service Manual

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2N 2N3055, MJ2955 Service Manual

2N3055(NPN), MJ2955(PNP)

Preferred Device

Complementary Silicon

Power Transistors

Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.

Features

DC Current Gain − hFE = 20−70 @ IC = 4 Adc

Collector−Emitter Saturation Voltage −

VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc

Excellent Safe Operating Area

Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector−Emitter Voltage

VCEO

60

Vdc

Collector−Emitter Voltage

VCER

70

Vdc

Collector−Base Voltage

VCB

100

Vdc

Emitter−Base Voltage

VEB

7

Vdc

Collector Current − Continuous

IC

15

Adc

Base Current

IB

7

Adc

Total Power Dissipation @ TC = 25°C

PD

115

W

Derate Above 25°C

 

0.657

W/°C

Operating and Storage Junction

TJ, Tstg

− 65 to +200

°C

Temperature Range

 

 

 

 

 

 

 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

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15 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

xxxx55G

AYYWW

MEX

 

160

 

 

 

 

 

 

 

 

 

 

 

(WATTS)

140

 

 

 

 

 

 

 

 

xxxx55

= Device Code

 

120

 

 

 

 

 

 

 

 

 

xxxx = 2N30 or MJ20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G

= Pb−Free Package

DISSIPATION

100

 

 

 

 

 

 

 

 

A

= Location Code

 

 

 

 

 

 

 

 

YY

= Year

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

WW

= Work Week

 

 

 

 

 

 

 

 

 

 

MEX

= Country of Orgin

 

 

 

 

 

 

 

 

 

 

POWER,

60

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

ORDERING INFORMATION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

Device

Package

Shipping

P

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N3055

TO−204AA

100 Units / Tray

 

0

 

 

 

 

 

 

 

 

2N3055G

TO−204AA

100 Units / Tray

 

0

25

50

75

100

125

150

175

200

 

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

 

(Pb−Free)

 

 

 

 

Figure 1. Power Derating

 

 

MJ2955

TO−204AA

100 Units / Tray

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MJ2955G

TO−204AA

100 Units / Tray

 

 

 

 

 

 

 

 

 

 

 

(Pb−Free)

 

*For additional information on our Pb−Free strategy and soldering details, please

 

 

 

download the ON Semiconductor Soldering and Mounting Techniques

Preferred devices are recommended choices for future use

Reference Manual, SOLDERRM/D.

 

 

 

 

 

and best overall value.

 

Semiconductor Components Industries, LLC, 2005

1

Publication Order Number:

December, 2005 − Rev. 6

 

2N3055/D

2N3055(NPN), MJ2955(PNP)

THERMAL CHARACTERISTICS

Characteristic

Symbol

 

Max

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction−to−Case

RqJC

 

1.52

_C/W

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

Characteristic

Symbol

Min

 

Max

Unit

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS*

 

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0)

VCEO(sus)

60

 

Vdc

 

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)

VCER(sus)

70

 

Vdc

 

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ICEO

 

0.7

mAdc

 

Collector Cutoff Current

ICEX

 

 

 

mAdc

 

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

 

 

1.0

 

 

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

 

 

5.0

 

 

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

IEBO

 

5.0

mAdc

 

ON CHARACTERISTICS* (Note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

 

 

 

 

(IC = 4.0 Adc, VCE = 4.0 Vdc)

 

20

 

70

 

 

(IC = 10 Adc, VCE = 4.0 Vdc)

 

5.0

 

 

 

Collector−Emitter Saturation Voltage

VCE(sat)

 

 

 

Vdc

 

(IC = 4.0 Adc, IB = 400 mAdc)

 

 

1.1

 

 

(IC = 10 Adc, IB = 3.3 Adc)

 

 

 

3.0

 

 

Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

 

1.5

Vdc

 

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

Is/b

2.87

 

Adc

 

(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Current Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

2.5

 

MHz

 

 

 

 

 

 

 

 

*Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

15

 

120

 

*Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

fhfe

10

 

kHz

 

*Indicates Within JEDEC Registration. (2N3055)

 

 

 

 

 

 

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

 

 

 

 

 

 

 

20

 

 

 

 

 

50 ms

(AMP)

10

dc

1 ms

 

 

6

 

 

CURRENT

 

 

4

 

 

2

 

500 ms

 

250 ms

COLLECTOR

 

1

 

 

0.6

BONDING WIRE LIMIT

,

C

 

0.4

THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)

I

 

SECOND BREAKDOWN LIMIT

0.2

6

10

20

40

60

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 2. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1.

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