ON Semiconductor 2N6667, 2N6667G, 2N6668, 2N6668G Service Manual

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ON Semiconductor 2N6667, 2N6667G, 2N6668, 2N6668G Service Manual

2N6667, 2N6668

Darlington Silicon

Power Transistors

Designed for general-purpose amplifier and low speed switching applications.

High DC Current Gain -

 

http://onsemi.com

hFE = 3500 (Typ) @ IC = 4.0 Adc

 

 

 

 

 

 

 

 

Collector-Emitter Sustaining Voltage - @ 200 mAdc

 

PNP SILICON

VCEO(sus) = 60 Vdc (Min) - 2N6667

 

 

DARLINGTON

= 80 Vdc (Min) - 2N6668

 

Low Collector-Emitter Saturation Voltage -

POWER TRANSISTORS

VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc

 

10 A, 60-80 V, 65 W

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

 

 

 

 

 

TO-220AB Compact Package

 

 

 

 

 

 

 

 

 

 

MARKING

Complementary to 2N6387, 2N6388

 

 

 

Pb-Free Packages are Available*

 

 

 

DIAGRAM

 

4

 

 

 

 

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

 

 

2N666x

 

COLLECTOR

 

PIN 1.

BASE

 

 

AYWWG

 

 

2.

COLLECTOR

 

1

2 3

3.

EMITTER

 

 

 

 

4.

COLLECTOR

 

 

 

 

CASE 221A-09

BASE

 

TO-220AB

 

 

x

= 7 or 8

8 k

120

A

= Assembly Location

Y

= Year

 

 

 

 

WW

= Work Week

 

EMITTER

G

= Pb-Free Package

 

 

 

Figure 1. Darlington Schematic

ORDERING INFORMATION

Device

Package

Shipping

 

 

 

2N6667

TO-220AB

50 Units/Rail

 

 

 

2N6667G

TO-220AB

50 Units/Rail

 

(Pb-Free)

 

 

 

 

2N6668

TO-220AB

50 Units/Rail

 

 

 

2N6668G

TO-220AB

50 Units/Rail

 

(Pb-Free)

 

 

 

 

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2007

1

Publication Order Number:

November, 2007 - Rev. 6

 

2N6667/D

2N6667, 2N6668

MAXIMUM RATINGS (Note 1)

 

Rating

Symbol

2N6667

 

2N6668

Unit

 

 

 

 

 

 

 

Collector-Emitter Voltage

VCEO

60

 

80

Vdc

Collector-Base Voltage

VCB

 

60

 

80

Vdc

Emitter-Base Voltage

VEB

 

 

5.0

Vdc

Collector Current -

Continuous

IC

 

10

Adc

-

Peak

 

 

 

15

 

 

 

 

 

 

 

Base Current

 

IB

 

250

mAdc

Total Device Dissipation @ TC = 25_C

PD

 

65

W

Derate above 25_C

 

 

 

0.52

W/_C

Total Device Dissipation @ TA = 25_C

PD

 

2.0

W

Derate above 25_C

 

 

 

0.016

W/_C

Operating and Storage Junction Temperature Range

TJ, Tstg

–65 to +150

_C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RqJC

1.92

_C/W

Thermal Resistance, Junction to Ambient

RqJA

62.5

_C/W

ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter Sustaining Voltage (Note 2)

2N6667

VCEO(sus)

60

-

Vdc

 

(IC = 200 mAdc, IB = 0)

2N6668

 

80

-

 

 

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

2N6667

ICEO

-

1.0

mAdc

 

(VCE = 80 Vdc, IB = 0)

2N6668

 

-

1.0

 

 

Collector Cutoff Current

 

 

 

 

 

 

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

2N6667

ICEX

-

300

mAdc

 

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

2N6668

 

-

300

 

 

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)

2N6667

 

-

3.0

mAdc

 

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)

2N6668

 

-

3.0

 

 

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

 

IEBO

-

5.0

mAdc

 

ON CHARACTERISTICS (Note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)

 

hFE

1000

20000

-

 

(IC = 10 Adc, VCE = 3.0 Vdc)

 

 

100

-

 

 

Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)

 

VCE(sat)

-

2.0

Vdc

 

(IC = 10 Adc, IB = 0.1 Adc)

 

 

-

3.0

 

 

Base-Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc)

 

VBE(sat)

-

2.8

Vdc

 

(IC = 10 Adc, IB = 0.1 Adc)

 

 

-

4.5

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Current Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

|hfe|

20

-

-

 

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

 

Cob

-

200

pF

 

Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

 

hfe

1000

-

-

 

1. Indicates JEDEC Registered Data.

 

 

 

 

 

 

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

 

 

 

 

 

 

http://onsemi.com

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