2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general-purpose amplifier and low speed switching applications.
• High DC Current Gain - |
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http://onsemi.com |
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hFE = 3500 (Typ) @ IC = 4.0 Adc |
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• Collector-Emitter Sustaining Voltage - @ 200 mAdc |
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PNP SILICON |
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VCEO(sus) = 60 Vdc (Min) - 2N6667 |
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DARLINGTON |
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= 80 Vdc (Min) - 2N6668 |
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• Low Collector-Emitter Saturation Voltage - |
POWER TRANSISTORS |
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VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc |
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10 A, 60-80 V, 65 W |
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• Monolithic Construction with Built-In Base-Emitter Shunt Resistors |
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• TO-220AB Compact Package |
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MARKING |
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• Complementary to 2N6387, 2N6388 |
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• Pb-Free Packages are Available* |
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DIAGRAM |
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4 |
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STYLE 1: |
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2N666x |
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COLLECTOR |
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PIN 1. |
BASE |
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AYWWG |
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2. |
COLLECTOR |
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1 |
2 3 |
3. |
EMITTER |
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4. |
COLLECTOR |
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CASE 221A-09 |
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BASE |
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TO-220AB |
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x |
= 7 or 8 |
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≈ 8 k |
≈ 120 |
A |
= Assembly Location |
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Y |
= Year |
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WW |
= Work Week |
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EMITTER |
G |
= Pb-Free Package |
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Figure 1. Darlington Schematic
ORDERING INFORMATION
Device |
Package |
Shipping |
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2N6667 |
TO-220AB |
50 Units/Rail |
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2N6667G |
TO-220AB |
50 Units/Rail |
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(Pb-Free) |
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2N6668 |
TO-220AB |
50 Units/Rail |
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2N6668G |
TO-220AB |
50 Units/Rail |
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(Pb-Free) |
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*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
♥ Semiconductor Components Industries, LLC, 2007 |
1 |
Publication Order Number: |
November, 2007 - Rev. 6 |
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2N6667/D |
2N6667, 2N6668
MAXIMUM RATINGS (Note 1)
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Rating |
Symbol |
2N6667 |
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2N6668 |
Unit |
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Collector-Emitter Voltage |
VCEO |
60 |
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80 |
Vdc |
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Collector-Base Voltage |
VCB |
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60 |
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80 |
Vdc |
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Emitter-Base Voltage |
VEB |
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5.0 |
Vdc |
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Collector Current - |
Continuous |
IC |
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10 |
Adc |
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Peak |
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15 |
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Base Current |
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IB |
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250 |
mAdc |
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Total Device Dissipation @ TC = 25_C |
PD |
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65 |
W |
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Derate above 25_C |
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0.52 |
W/_C |
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Total Device Dissipation @ TA = 25_C |
PD |
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2.0 |
W |
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Derate above 25_C |
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0.016 |
W/_C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
–65 to +150 |
_C |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RqJC |
1.92 |
_C/W |
Thermal Resistance, Junction to Ambient |
RqJA |
62.5 |
_C/W |
ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Sustaining Voltage (Note 2) |
2N6667 |
VCEO(sus) |
60 |
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Vdc |
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(IC = 200 mAdc, IB = 0) |
2N6668 |
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80 |
- |
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Collector Cutoff Current (VCE = 60 Vdc, IB = 0) |
2N6667 |
ICEO |
- |
1.0 |
mAdc |
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(VCE = 80 Vdc, IB = 0) |
2N6668 |
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1.0 |
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Collector Cutoff Current |
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(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) |
2N6667 |
ICEX |
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300 |
mAdc |
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(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) |
2N6668 |
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300 |
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(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
2N6667 |
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3.0 |
mAdc |
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(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
2N6668 |
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3.0 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
- |
5.0 |
mAdc |
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ON CHARACTERISTICS (Note 1) |
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DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) |
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hFE |
1000 |
20000 |
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(IC = 10 Adc, VCE = 3.0 Vdc) |
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100 |
- |
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Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) |
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VCE(sat) |
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2.0 |
Vdc |
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(IC = 10 Adc, IB = 0.1 Adc) |
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3.0 |
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Base-Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc) |
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VBE(sat) |
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2.8 |
Vdc |
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(IC = 10 Adc, IB = 0.1 Adc) |
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4.5 |
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DYNAMIC CHARACTERISTICS |
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Current Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |
|hfe| |
20 |
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- |
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Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Cob |
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200 |
pF |
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Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) |
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hfe |
1000 |
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1. Indicates JEDEC Registered Data. |
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2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. |
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http://onsemi.com
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