2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium-Power
Silicon Transistors
These devices are designed for general-purpose amplifier and low-speed switching applications.
Features
• High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc - 2N6387, 2N6388
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating |
|
Symbol |
Value |
Unit |
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Collector-Emitter Voltage |
2N6387 |
VCEO |
60 |
Vdc |
|
2N6388 |
|
80 |
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Collector-Base Voltage |
2N6387 |
VCB |
60 |
Vdc |
|
2N6388 |
|
80 |
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Emitter-Base Voltage |
|
VEB |
5.0 |
Vdc |
Collector Current - Continuous |
|
IC |
10 |
Adc |
- Peak |
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15 |
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Base Current |
|
IB |
250 |
mAdc |
Total Power Dissipation @ TC = 25_C |
PD |
65 |
W |
|
Derate above 25_C |
|
|
0.52 |
W/°C |
Total Power Dissipation @ TA = 25_C |
PD |
2.0 |
W |
|
Derate above 25_C |
|
|
0.016 |
W/°C |
Operating and Storage Junction, |
|
TJ, Tstg |
-65 to +150 |
°C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristics |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction-to-Case |
RqJC |
1.92 |
_C/W |
Thermal Resistance, Junction-to-Ambient |
RqJA |
62.5 |
_C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
DARLINGTON NPN SILICON POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 - 80 VOLTS
MARKING
DIAGRAM
4
TO-220AB |
2N638xG |
CASE 221A |
AYWW |
STYLE 1 |
|
1
2
3
2N638x = Device Code
x = 7 or 8
G = Pb-Free Package
A= Assembly Location
Y= Year
WW = Work Week
ORDERING INFORMATION
Device |
Package |
Shipping |
|
|
|
2N6387 |
TO-220AB |
50 Units / Rail |
|
|
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2N6387G |
TO-220AB |
50 Units / Rail |
|
(Pb-Free) |
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2N6388 |
TO-220AB |
50 Units / Rail |
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2N6388G |
TO-220AB |
50 Units / Rail |
|
(Pb-Free) |
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Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2007 |
1 |
Publication Order Number: |
November, 2007 - Rev. 13 |
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2N6387/D |
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2N6387, 2N6388 |
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TA |
TC |
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4.0 |
80 |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
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TC |
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2.0 |
40 |
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, POWER |
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TA |
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1.0 |
20 |
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D |
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P |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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T, TEMPERATURE (°C) |
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Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Sustaining Voltage (Note 3) |
|
VCEO(sus) |
|
|
Vdc |
|
(IC = 200 mAdc, IB = 0) |
2N6387 |
|
60 |
- |
|
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|
2N6388 |
|
80 |
- |
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Collector Cutoff Current |
|
ICEO |
|
|
mAdc |
|
(VCE = 60 Vdc, IB = 0) |
2N6387 |
|
- |
1.0 |
|
|
(VCE = 80 Vdc, IB = 0) |
2N6388 |
|
- |
1.0 |
|
|
Collector Cutoff Current |
|
ICEX |
|
|
mAdc |
|
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) |
2N6387 |
|
- |
300 |
|
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(VCE - 80 Vdc, VEB(off) = 1.5 Vdc) |
2N6388 |
|
- |
300 |
|
|
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
2N6387 |
|
- |
3.0 |
mAdc |
|
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
2N6388 |
|
- |
3.0 |
|
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
|
IEBO |
- |
5.0 |
mAdc |
|
ON CHARACTERISTICS (Note 3) |
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DC Current Gain |
|
hFE |
|
|
- |
|
(IC = 5.0 Adc, VCE = 3.0 Vdc) |
2N6387, 2N6388 |
|
1000 |
20,000 |
|
|
(IC = 1 0 Adc, VCE = 3.0 Vdc) |
2N6387, 2N6388 |
|
100 |
- |
|
|
Collector-Emitter Saturation Voltage |
|
VCE(sat) |
|
|
Vdc |
|
(IC = 5.0 Adc, IB = 0.01 Adc) |
2N6387, 2N6388 |
|
- |
2.0 |
|
|
(IC = 10 Adc, IB = 0.1 Adc) |
2N6387, 2N6388 |
|
- |
3.0 |
|
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Base-Emitter On Voltage |
|
VBE(on) |
|
|
Vdc |
|
(IC = 5.0 Adc, VCE = 3.0 Vdc) |
2N6387, 2N6388 |
|
- |
2.8 |
|
|
(IC = 10 Adc, VCE = 3.0 Vdc) |
2N6387, 2N6388 |
|
- |
4.5 |
|
|
DYNAMIC CHARACTERISTICS |
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Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |
|hfe| |
20 |
- |
- |
|
|
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
|
Cob |
- |
200 |
pF |
|
Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) |
|
hfe |
1000 |
- |
- |
|
2.Indicates JEDEC Registered Data.
3.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
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