2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications.
Features
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc |
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• Low Leakage Current |
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ICEX = 1.0 mAdc (max) at Rated Voltage |
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• Excellent DC Current Gain − |
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hFE = 20 (min) at IC = 10 Adc |
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• High Current Gain Bandwidth Product − |
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ft = 4.0 MHz (min) at IC = 1.0 Adc |
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• Pb−Free Packages are Available* |
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MAXIMUM RATINGS (Note 1) |
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Rating |
Symbol |
Value |
Unit |
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Collector−Emitter Voltage |
VCEO |
60 |
Vdc |
2N5883, 2N5885 |
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2N5884, 2N5886 |
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80 |
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Collector−Base Voltage |
VCB |
60 |
Vdc |
2N5883, 2N5885 |
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2N5884, 2N5886 |
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80 |
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Emitter−Base Voltage |
VEB |
5.0 |
Vdc |
Collector Current − |
IC |
25 |
Adc |
Continuous |
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Peak |
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50 |
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Base Current |
IB |
7.5 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
200 |
W |
Derate above 25°C |
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1.15 |
W/°C |
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Operating and Storage Junction |
TJ, Tstg |
– 65 to +200 |
°C |
Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction−to−Case |
qJC |
0.875 |
°C/W |
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25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
2N588xG
AYYWW
MEX
2N588x |
= Device Code |
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x = 3, 4, 5, or 6 |
G |
= Pb−Free Package |
A |
= Assembly Location |
YY |
= Year |
WW |
= Work Week |
MEX |
= Country of Origin |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.Indicates JEDEC registered data. Units and conditions differ on some parameters and re−registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2006 |
1 |
Publication Order Number: |
March, 2006 − Rev. 11 |
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2N5883/D |
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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Collector−Emitter Sustaining Voltage (Note 3) |
2N5883, 2N5885 |
VCEO(sus) |
60 |
− |
Vdc |
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(IC = 200 mAdc, IB = 0) |
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2N5884, 2N5886 |
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80 |
− |
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Collector Cutoff Current |
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ICEO |
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(VCE = 30 Vdc, IB = 0) |
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2N5883, 2N5885 |
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− |
2.0 |
mAdc |
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(VCE = 40 Vdc, IB = 0) |
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2N5984, 2N5886 |
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− |
2.0 |
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Collector Cutoff Current |
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ICEX |
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(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) |
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2N5883, 2N5885 |
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− |
1.0 |
mAdc |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) |
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2N5884, 2N5886 |
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− |
1.0 |
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(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) |
2N5883, 2N5885 |
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− |
10 |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) |
2N5884, 2N5886 |
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− |
10 |
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Collector Cutoff Current |
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ICBO |
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(VCB = 60 Vdc, IE = 0) |
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2N5883, 2N5885 |
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− |
1.0 |
mAdc |
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(VCB = 80 Vdc, IE = 0) |
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2N5884, 2N5886 |
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− |
1.0 |
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Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) |
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IEBO |
− |
1.0 |
mAdc |
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ON CHARACTERISTICS |
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DC Current Gain (Note 3) |
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hFE |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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35 |
− |
− |
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(IC = 10 Adc, VCE = 4.0 Vdc) |
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20 |
100 |
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(IC = 25 Adc, VCE = 4.0 Vdc) |
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4.0 |
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Collector−Emitter Saturation Voltage (Note 3) |
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VCE(sat) |
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(IC = 15 Adc, IB = 1.5 Adc) |
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− |
1.0 |
Vdc |
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(IC = 25 Adc, IB = 6.25 Adc) |
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− |
4.0 |
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Base−Emitter Saturation Voltage (Note 3) |
(IC = 25 Adc, IB = 6.25 Adc) |
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VBE(sat) |
− |
2.5 |
Vdc |
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Base−Emitter On Voltage (Note 3) (IC = 10 Adc, VCE = 4.0 Vdc) |
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VBE(on) |
− |
1.5 |
Vdc |
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DYNAMIC CHARACTERISTICS |
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Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) |
fT |
4.0 |
− |
MHz |
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Output Capacitance |
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2N5883, 2N5884 |
Cob |
− |
1000 |
pF |
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(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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2N5885, 2N5886 |
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− |
500 |
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Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) |
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hfe |
20 |
− |
− |
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SWITCHING CHARACTERISTICS |
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Rise Time |
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tr |
− |
0.7 |
ms |
Storage Time |
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(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) |
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− |
1.0 |
ms |
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Fall Time |
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tf |
− |
0.8 |
ms |
2.Indicates JEDEC Registered Data.
3.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4.fT = |hfe| • ftest.
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200 |
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(WATTS) |
175 |
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150 |
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DISSIPATION |
125 |
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100 |
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75 |
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, POWER |
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50 |
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D |
25 |
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P |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
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