2N5190, 2N5191, 2N5192
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195.
Features
• ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V
•Epoxy Meets UL 94 V−0 @ 0.125 in.
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
|
Symbol |
Value |
Unit |
|
|
|
|
|
Collector−Emitter Voltage |
2N5190 |
VCEO |
40 |
Vdc |
|
2N5191 |
|
60 |
|
|
2N5192 |
|
80 |
|
|
|
|
|
|
Collector−Base Voltage |
2N5190 |
VCBO |
40 |
Vdc |
|
2N5191 |
|
60 |
|
|
2N5192 |
|
80 |
|
|
|
|
|
|
Emitter−Base Voltage |
|
VEBO |
5.0 |
Vdc |
Collector Current |
|
IC |
4.0 |
Adc |
Base Current |
|
IB |
1.0 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
40 |
W |
|
Derate above 25°C |
|
|
320 |
mW/°C |
|
|
|
|
|
Operating and Storage Junction |
|
TJ, Tstg |
–65 to +150 |
°C |
Temperature Range |
|
|
|
|
|
|
|
|
|
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction−to−Case |
RqJC |
3.12 |
°C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS 40, 60, 80 VOLTS − 40 WATTS
TO−225AA
CASE 77
STYLE 1
3 2 1
MARKING DIAGRAM
|
|
YWW |
|
|
2 |
|
|
N519xG |
Y |
= |
Year |
WW |
= |
Work Week |
2N519x = |
Device Code |
|
|
|
x = 0, 1, or 2 |
G |
= |
Pb−Free Package |
ORDERING INFORMATION
Device |
Package |
Shipping† |
2N5190 |
TO−225AA |
500 Units/Box |
|
|
|
2N5190G |
TO−225AA |
500 Units/Box |
|
(Pb−Free) |
|
|
|
|
2N5191 |
TO−225AA |
500 Units/Box |
|
|
|
2N5191G |
TO−225AA |
500 Units/Box |
|
(Pb−Free) |
|
|
|
|
2N5192 |
TO−225AA |
500 Units/Box |
|
|
|
2N5192G |
TO−225AA |
500 Units/Box |
|
(Pb−Free) |
|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
♥ Semiconductor Components Industries, LLC, 2006 |
1 |
Publication Order Number: |
March, 2006 − Rev. 12 |
|
2N5191/D |
2N5190, 2N5191, 2N5192
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Collector−Emitter Sustaining Voltage (Note 1) |
|
VCEO(sus) |
|
|
|
(IC = 0.1 Adc, IB = 0) |
2N5190 |
|
40 |
− |
Vdc |
|
2N5191 |
|
60 |
− |
|
|
2N5192 |
|
80 |
− |
|
|
|
|
|
|
|
Collector Cutoff Current |
|
ICEO |
|
|
|
(VCE = 40 Vdc, IB = 0) |
2N5190 |
|
− |
1.0 |
mAdc |
(VCE = 60 Vdc, IB = 0) |
2N5191 |
|
− |
1.0 |
|
(VCE = 80 Vdc, IB = 0) |
2N5192 |
|
− |
1.0 |
|
Collector Cutoff Current |
|
ICEX |
|
|
|
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) |
2N5190 |
|
− |
0.1 |
mAdc |
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) |
2N5191 |
|
− |
0.1 |
|
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) |
2N5192 |
|
− |
0.1 |
|
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
2N5190 |
|
− |
2.0 |
|
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
2N5191 |
|
− |
2.0 |
|
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
2N5192 |
|
− |
2.0 |
|
Collector Cutoff Current |
|
ICBO |
|
|
|
(VCB = 40 Vdc, IE = 0) |
2N5190 |
|
− |
0.1 |
mAdc |
(VCB = 60 Vdc, IE = 0) |
2N5191 |
|
− |
0.1 |
|
(VCB = 80 Vdc, IE = 0) |
2N5192 |
|
− |
0.1 |
|
Emitter Cutoff Current |
|
IEBO |
− |
1.0 |
mAdc |
(VBE = 5.0 Vdc, IC = 0) |
|
|
|
|
|
ON CHARACTERISTICS (Note 1) |
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain |
|
hFE |
|
|
− |
(IC = 1.5 Adc, VCE = 2.0 Vdc) |
2N5190/2N5191 |
|
25 |
100 |
|
|
2N5192 |
|
20 |
80 |
|
(IC = 4.0 Adc, VCE = 2.0 Vdc) |
2N5190/2N5191 |
|
10 |
− |
|
|
2N5192 |
|
7.0 |
− |
|
|
|
|
|
|
|
Collector−Emitter Saturation Voltage |
|
VCE(sat) |
|
|
|
(IC = 1.5 Adc, IB = 0.15 Adc) |
|
|
− |
0.6 |
Vdc |
(IC = 4.0 Adc, IB = 1.0 Adc) |
|
|
− |
1.4 |
|
Base−Emitter On Voltage |
|
VBE(on) |
− |
1.2 |
Vdc |
(IC = 1.5 Adc, VCE = 2.0 Vdc) |
|
|
|
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Current−Gain — Bandwidth Product |
|
fT |
2.0 |
− |
MHz |
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) |
|
|
|
|
|
*JEDEC Registered Data. |
|
|
|
|
|
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. |
|
|
|
|
|
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