2N 2N5088, 2N5089 Service Manual

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2N 2N5088, 2N5089 Service Manual

2N5088, 2N5089

Amplifier Transistors

NPN Silicon

Features

 

Pb−Free Packages are Available*

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector − Emitter Voltage

VCEO

30

Vdc

2N5088

 

 

2N5089

 

25

 

 

 

 

 

Collector − Base Voltage

VCBO

35

Vdc

2N5088

 

 

2N5089

 

30

 

 

 

 

 

Emitter − Base Voltage

VEBO

3.0

Vdc

Collector Current − Continuous

IC

50

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

mW

Derate above 25°C

 

5.0

mW/°C

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

W

Derate above 25°C

 

12

mW/°C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

−55 to +150

°C

Temperature Range

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

(Note 1)

 

 

 

 

 

 

 

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. RqJA is measured with the device soldered into a typical printed circuit board.

3 COLLECTOR

2 BASE

1 EMITTER

TO−92

CASE 29

STYLE 1

1 2

 

1

3

2

 

3

STRAIGHT LEAD

BENT LEAD

BULK PACK

TAPE & REEL

 

 

AMMO PACK

MARKING DIAGRAM

2N

508x

AYWW G

G

x = 8 or 9

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ORDERING INFORMATION

Device

Package

Shipping

2N5088G

TO−92

5000 Units/Bulk

 

(Pb−Free)

 

 

 

 

2N2088RLRAG

TO−92

2000/Tape & Reel

 

(Pb−Free)

 

 

 

 

2N5089G

TO−92

5000 Units/Bulk

 

(Pb−Free)

 

 

 

 

2N2089RLRE

TO−92

2000/Tape & Reel

 

 

 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2007

1

Publication Order Number:

March, 2007 − Rev. 4

 

2N5088/D

2N5088, 2N5089

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector −Emitter Breakdown Voltage (Note 2)

 

V(BR)CEO

 

 

Vdc

(IC = 1.0 mAdc, IB = 0)

2N5088

 

30

 

 

2N5089

 

25

 

 

 

 

 

 

 

Collector −Base Breakdown Voltage

 

V(BR)CBO

35

Vdc

(IC = 100 mAdc, IE = 0)

2N5088

 

 

 

2N5089

 

30

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICBO

 

 

nAdc

(VCB = 20 Vdc, IE = 0)

2N5088

 

50

 

(VCB = 15 Vdc, IE = 0)

2N5089

 

50

 

Emitter Cutoff Current

 

IEBO

 

 

nAdc

(VEB(off) = 3.0 Vdc, IC = 0)

 

 

50

 

(VEB(off) = 4.5 Vdc, IC = 0)

 

 

100

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

300

900

(IC = 100 mAdc, VCE = 5.0 Vdc)

2N5088

 

 

 

2N5089

 

400

1200

 

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5088

 

350

 

 

2N5089

 

450

 

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

2N5088

 

300

 

 

2N5089

 

400

 

 

 

 

 

 

 

Collector −Emitter Saturation Voltage

 

VCE(sat)

0.5

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

 

 

Base −Emitter On Voltage

 

VBE(on)

0.8

Vdc

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

 

 

 

 

 

SMALL−SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current −Gain − Bandwidth Product

 

fT

50

MHz

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

 

 

 

 

 

Collector−Base Capacitance

 

Ccb

4.0

pF

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

Emitter−Base Capacitance

 

Ceb

10

pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

 

 

 

 

 

Small−Signal Current Gain

 

hfe

 

 

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N5088

 

350

1400

 

 

2N5089

 

450

1800

 

 

 

 

 

 

 

Noise Figure

 

NF

3.0

dB

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

2N5088

 

 

 

2N5089

 

2.0

 

 

 

 

 

 

 

2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

http://onsemi.com

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