2N4921, 2N4922, 2N4923
2N4923 is a Preferred Device
Medium−Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications.
Features
•Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
•Excellent Power Dissipation Due to Thermopad Construction − PD = 30 W @ TC = 25_C
•Excellent Safe Operating Area
•Gain Specified to IC = 1.0 A
•Complement to PNP 2N4918, 2N4919, 2N4920
•Pb−Free Packages are Available*
http://onsemi.com
1.0 AMPERE
GENERAL PURPOSE POWER TRANSISTORS 40−80 VOLTS, 30 WATTS
MAXIMUM RATINGS
|
Rating |
|
Symbol |
Value |
Unit |
|
|
|
|
|
|
Collector−Emitter Voltage |
2N4921 |
VCEO |
40 |
Vdc |
|
|
|
2N4922 |
|
60 |
|
|
|
2N4923 |
|
80 |
|
|
|
|
|
|
|
Collector−Emitter Voltage |
2N4921 |
VCB |
40 |
Vdc |
|
|
|
2N4922 |
|
60 |
|
|
|
2N4923 |
|
80 |
|
|
|
|
|
|
|
Emitter Base Voltage |
|
VEB |
5.0 |
Vdc |
|
Collector Current |
− Continuous (Note 1) |
IC |
1.0 |
Adc |
|
|
|
|
|
3.0 |
|
|
|
|
|
|
|
Base Current |
− Continuous |
|
IB |
1.0 |
Adc |
Total Power Dissipation @ TC = 25_C |
PD |
30 |
W |
||
Derate above 25_C |
|
|
0.24 |
mW/_C |
|
Operating and Storage Junction |
|
TJ, Tstg |
–65 to +150 |
_C |
|
Temperature Range |
|
|
|
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|
|
|
|
|
||
THERMAL CHARACTERISTICS (Note 2) |
|
|
|||
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction−to−Case |
qJC |
4.16 |
_C/W |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.The 1.0 A maximum IC value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6).
2.Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−225
CASE 77
STYLE 1
3 2 1
MARKING DIAGRAM
1
|
|
YWW |
|
|
|
|
2 |
|
|
|
|
N492xG |
|
|
Y |
= Year |
|
||
WW |
= Work Week |
|
||
2N492x |
= Device Code |
|||
|
|
x = 1, 2, or 3 |
||
G |
= Pb−Free Package |
|||
|
|
|
||
ORDERING INFORMATION |
||||
|
|
|
|
|
Device |
|
Package |
|
Shipping |
|
|
|
|
|
2N4921 |
|
TO−225 |
|
500 Units / Box |
|
|
|
|
|
2N4921G |
|
TO−225 |
|
500 Units / Box |
|
|
(Pb−Free) |
|
|
|
|
|
|
|
2N4922 |
|
TO−225 |
|
500 Units / Box |
|
|
|
|
|
2N4922G |
|
TO−225 |
|
500 Units / Box |
|
|
(Pb−Free) |
|
|
|
|
|
|
|
2N4923 |
|
TO−225 |
|
500 Units / Box |
|
|
|
|
|
2N4923G |
|
TO−225 |
|
500 Units / Box |
|
|
(Pb−Free) |
|
|
|
|
|
|
|
|
|
|
|
|
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2006 |
1 |
Publication Order Number: |
January, 2006 − Rev. 11 |
|
2N4921/D |
2N4921, 2N4922, 2N4923
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Collector−Emitter Sustaining Voltage (Note 3) |
|
VCEO(sus) |
|
|
Vdc |
(IC = 0.1 Adc, IB = 0) |
2N4921 |
|
40 |
− |
|
|
2N4922 |
|
60 |
− |
|
|
2N4923 |
|
80 |
− |
|
|
|
|
|
|
|
Collector Cutoff Current |
|
ICEO |
|
|
mAdc |
(VCE = 20 Vdc, IB = 0) |
2N4921 |
|
− |
0.5 |
|
(VCE = 30 Vdc, IB = 0) |
2N4922 |
|
− |
0.5 |
|
(VCE = 40 Vdc, IB = 0) |
2N4923 |
|
− |
0.5 |
|
Collector Cutoff Current |
|
ICEX |
|
|
mAdc |
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc) |
|
|
− |
0.1 |
|
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C |
|
|
− |
0.5 |
|
Collector Cutoff Current |
|
ICBO |
|
|
mAdc |
(VCB = Rated VCB, IE = 0) |
|
|
− |
0.1 |
|
Emitter Cutoff Current |
|
IEBO |
|
|
mAdc |
(VEB = 5.0 Vdc, IC = 0) |
|
|
− |
1.0 |
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain (Note 3) |
|
hFE |
|
|
− |
(IC = 50 mAdc, VCE = 1.0 Vdc) |
|
|
40 |
− |
|
(IC = 500 mAdc, VCE = 1.0 Vdc) |
|
|
30 |
150 |
|
(IC = 1.0 Adc, VCE = 1.0 Vdc) |
|
|
10 |
− |
|
Collector−Emitter Saturation Voltage (Note 3) |
|
VCE(sat) |
|
|
Vdc |
(IC = 1.0 Adc, IB = 0.1 Adc) |
|
|
− |
0.6 |
|
Base−Emitter Saturation Voltage (Note 3) |
|
VBE(sat) |
|
|
Vdc |
(IC = 1.0 Adc, IB = 0.1 Adc) |
|
|
− |
1.3 |
|
Base−Emitter On Voltage (Note 3) |
|
VBE(on) |
|
|
Vdc |
(IC = 1.0 Adc, VCE = 1.0 Vdc) |
|
|
− |
1.3 |
|
SMALL−SIGNAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Current−Gain − Bandwidth Product |
|
fT |
|
|
MHz |
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) |
|
|
3.0 |
− |
|
Output Capacitance |
|
Cob |
|
|
pF |
(VCB = 10 Vdc, IE = 0, f = 100 kHz) |
|
|
− |
100 |
|
Small−Signal Current Gain |
|
hfe |
|
|
− |
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
|
|
25 |
− |
|
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
http://onsemi.com
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