2N 2N4401-D Service Manual

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2N4401

Preferred Device

General Purpose

Transistors

NPN Silicon

Features

Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector − Emitter Voltage

VCEO

40

Vdc

Collector − Base Voltage

VCBO

60

Vdc

Emitter − Base Voltage

VEBO

6.0

Vdc

Collector Current − Continuous

IC

600

mAdc

Total Device Dissipation

PD

 

 

@ TA = 25°C

 

625

mW

Derate above 25°C

 

5.0

mW/°C

 

 

 

 

Total Device Dissipation

PD

 

 

@ TC = 25°C

 

1.5

W

Derate above 25°C

 

12

mW/°C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

−55 to

°C

Temperature Range

 

+150

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

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COLLECTOR 3

2 BASE

1 EMITTER

TO−92

CASE 29

STYLE 1

1 2

 

1

3

2

 

3

STRAIGHT LEAD

BENT LEAD

BULK PACK

TAPE & REEL

 

 

AMMO PACK

MARKING DIAGRAM

2N

4401 AYWW G

G

2N4401

= Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2007

1

Publication Order Number:

March, 2007 − Rev. 3

 

2N4401/D

2N4401

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

 

 

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

Vdc

Collector−Base Breakdown Voltage

 

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

60

Vdc

Emitter−Base Breakdown Voltage

 

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

6.0

Vdc

Base Cutoff Current

 

 

(VCE = 35 Vdc, VEB = 0.4 Vdc)

IBEV

0.1

mAdc

Collector Cutoff Current

 

 

(VCE = 35 Vdc, VEB = 0.4 Vdc)

ICEX

0.1

mAdc

ON CHARACTERISTICS (Note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

hFE

20

 

 

 

 

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

 

40

 

 

 

 

 

(IC = 10 mAdc, VCE = 1.0 Vdc)

 

80

 

 

 

 

 

(IC = 150 mAdc, VCE = 1.0 Vdc)

 

100

300

 

 

 

 

 

(IC = 500 mAdc, VCE = 2.0 Vdc)

 

40

 

Collector−Emitter Saturation Voltage

 

(IC = 150 mAdc, IB = 15 mAdc)

VCE(sat)

0.4

Vdc

 

 

 

 

(IC = 500 mAdc, IB = 50 mAdc)

 

0.75

 

Base−Emitter Saturation Voltage

 

(IC = 150 mAdc, IB = 15 mAdc)

VBE(sat)

0.75

0.95

Vdc

 

 

 

 

(IC = 500 mAdc, IB = 50 mAdc)

 

1.2

 

 

 

 

 

 

 

 

 

SMALL−SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

250

MHz

Collector−Base Capacitance

 

 

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

6.5

pF

Emitter−Base Capacitance

 

 

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

30

pF

Input Impedance

 

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

1.0

15

k W

Voltage Feedback Ratio

 

(I

= 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)

h

0.1

8.0

X 10−4

 

 

 

C

CE

re

 

 

 

Small−Signal Current Gain

 

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

40

500

Output Admittance

 

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

1.0

30

mmhos

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

(VCC = 30 Vdc, VBE = 2.0 Vdc,

td

15

ns

Rise Time

 

IC = 150 mAdc, IB1 = 15 mAdc)

t

20

ns

 

 

 

 

 

r

 

 

 

Storage Time

 

(V = 30 Vdc, I

= 150 mAdc,

ts

225

ns

 

 

CC

C

 

 

 

 

 

Fall Time

 

IB1 = IB2 = 15 mAdc)

t

30

ns

 

 

 

 

 

f

 

 

 

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

 

 

 

 

ORDERING INFORMATION

Device

Package

Shipping

2N4401

TO−92

5000 Units / Bulk

 

 

 

2N4401G

TO−92

5000 Units / Bulk

 

(Pb−Free)

 

 

 

 

2N4401RLRA

TO−92

2000 / Tape & Reel

 

 

 

2N4401RLRAG

TO−92

2000 / Tape & Reel

 

(Pb−Free)

 

 

 

 

2N4401RLRMG

TO−92

2000 / Ammo Pack

 

(Pb−Free)

 

 

 

 

2N4401RLRP

TO−92

2000 / Ammo Pack

 

 

 

2N4401RLRPG

TO−92

2000 / Ammo Pack

 

(Pb−Free)

 

 

 

 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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2

2N 2N4401-D Service Manual

 

 

 

2N4401

 

 

 

SWITCHING TIME EQUIVALENT TEST CIRCUITS

 

 

 

+30 V

 

 

+30 V

 

1.0 to 100 ms,

200 W

 

1.0 to 100 ms,

200 W

 

+16 V

DUTY CYCLE 2.0%

+16 V

DUTY CYCLE 2.0%

 

 

 

 

 

 

 

0

 

 

0

1.0 kW

 

−2.0 V

1.0 kW

CS* < 10 pF

−14 V

CS* < 10 pF

< 20 ns

 

< 2.0 ns

 

 

 

 

 

 

 

 

 

Scope rise time < 4.0 ns

−4.0 V

 

 

 

*Total shunt capacitance of test jig connectors, and oscilloscope

 

 

Figure 1. Turn−On Time

 

 

Figure 2. Turn−Off Time

 

 

 

 

 

 

 

 

TRANSIENT CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

100°C

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7.0

VCC = 30 V

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cobo

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CHARGEQ, (nC)

 

 

 

 

 

QT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CAPACITANCE(pF)

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ccb

 

 

0.3

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

QA

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

 

10

20

30

50

70

100

200

300

500

 

 

 

 

REVERSE VOLTAGE (VOLTS)

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

Figure 3. Capacitances

Figure 4. Charge Data

 

100

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

IC/IB = 10

 

 

50

 

 

 

 

 

 

 

 

(ns)

30

 

 

 

 

 

tr @ VCC = 30 V

 

 

 

 

 

 

tr @ VCC = 10 V

 

 

 

 

 

 

 

 

TIME

20

 

 

 

 

 

td @ VEB = 2.0 V

 

 

 

 

 

 

td @ VEB = 0

 

 

t,

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn−On Time

 

100

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

VCC = 30 V

 

 

 

 

tr

 

 

 

I /I

= 10

 

 

 

 

 

 

 

 

C B

 

 

 

50

 

 

 

 

 

 

 

 

(ns)

30

tf

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t, TIME

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise and Fall Times

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3

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