2N 2N3906-D Service Manual

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2N 2N3906-D Service Manual

2N3906

Preferred Device

General Purpose

Transistors

PNP Silicon

Features

Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector − Emitter Voltage

VCEO

40

Vdc

Collector − Base Voltage

VCBO

40

Vdc

Emitter − Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

mW

Derate above 25°C

 

5.0

mW/°C

 

 

 

 

Total Power Dissipation @ TA = 60°C

PD

250

mW

Total Device Dissipation @ TC = 25°C

PD

1.5

W

Derate above 25°C

 

12

mW/°C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

−55 to +150

°C

Temperature Range

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS (Note 1)

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

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COLLECTOR 3

2 BASE

1 EMITTER

TO−92

CASE 29

STYLE 1

1 2

 

1

3

2

 

3

STRAIGHT LEAD

BENT LEAD

BULK PACK

TAPE & REEL

 

 

AMMO PACK

MARKING DIAGRAM

2N

3906

ALYWG

G

A = Assembly Location

L = Wafer Lot

Y = Year

W = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2007

1

Publication Order Number:

March, 2007 − Rev. 3

 

2N3906/D

2N3906

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

 

Characteristic

 

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector −Emitter Breakdown Voltage (Note 2)

 

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

Vdc

Collector −Base Breakdown Voltage

 

 

 

 

(IC = 10 mAdc, IE = 0)

V(BR)CBO

40

Vdc

Emitter −Base Breakdown Voltage

 

 

 

 

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

Vdc

Base Cutoff Current

 

 

 

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

50

nAdc

Collector Cutoff Current

 

 

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

50

nAdc

ON CHARACTERISTICS (Note 2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

 

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

hFE

60

 

 

 

 

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

 

80

 

 

 

 

 

(IC = 10 mAdc, VCE = 1.0 Vdc)

 

100

300

 

 

 

 

 

(IC = 50 mAdc, VCE = 1.0 Vdc)

 

60

 

 

 

 

 

(IC = 100 mAdc, VCE = 1.0 Vdc)

 

30

 

Collector −Emitter Saturation Voltage

 

 

(IC = 10 mAdc, IB = 1.0 mAdc)

VCE(sat)

0.25

Vdc

 

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc

 

0.4

 

Base −Emitter Saturation Voltage

 

 

(IC = 10 mAdc, IB = 1.0 mAdc)

VBE(sat)

0.65

0.85

Vdc

 

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc)

 

0.95

 

SMALL−SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current −Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

250

MHz

Output Capacitance

 

 

 

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

4.5

pF

Input Capacitance

 

 

 

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

10

pF

Input Impedance

 

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

2.0

12

kW

Voltage Feedback Ratio

(I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz)

h

0.1

10

X 10− 4

 

 

 

 

 

re

 

 

 

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

100

400

Output Admittance

 

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

3.0

60

mmhos

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

NF

4.0

dB

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

 

 

td

35

ns

Rise Time

IC = 10 mAdc, IB1 = 1.0 mAdc)

 

 

tr

35

ns

Storage Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

ts

225

ns

Fall Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

tf

75

ns

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

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2

2N3906

ORDERING INFORMATION

Device

Package

Shipping

2N3906

TO−92

5000 Units / Bulk

 

 

 

2N3906G

TO−92

5000 Units / Bulk

 

(Pb−Free)

 

 

 

 

2N3906RL1

TO−92

5000 Units / Bulk

 

 

 

2N3906RL1G

TO−92

5000 Units / Bulk

 

(Pb−Free)

 

 

 

 

2N3906RLRA

TO−92

2000 / Tape & Reel

 

 

 

2N3906RLRAG

TO−92

2000 / Tape & Reel

 

(Pb−Free)

 

 

 

 

2N3906RLRM

TO−92

2000 / Ammo Pack

 

 

 

2N3906RLRMG

TO−92

2000 / Ammo Pack

 

(Pb−Free)

 

 

 

 

2N3906RLRP

TO−92

2000 / Tape & Reel

 

 

 

2N3906RLRPG

TO−92

2000 / Tape & Reel

 

(Pb−Free)

 

 

 

 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

 

3 V

 

275

 

< 1 ns

+0.5 V

10 k

CS < 4 pF*

10.6 V

300 ns DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

 

 

3 V

+9.1 V

< 1 ns

 

 

 

 

 

275

 

10 k

 

0

 

 

 

1N916

CS < 4 pF*

10 < t1 < 500 ms t1 10.9 V DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 2. Storage and Fall Time Equivalent Test Circuit

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