2N 2N3773, 2N6609 Service Manual

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2N 2N3773, 2N6609 Service Manual

NPN 2N3773*, PNP 2N6609

Preferred Device

Complementary Silicon

Power Transistors

The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters.

Features

Pb−Free Packages are Available**

High Safe Operating Area (100% Tested) 150 W @ 100 V

Completely Characterized for Linear Operation

High DC Current Gain and Low Saturation Voltage

hFE = 15 (Min) @ 8.0 A, 4.0 V

VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A

For Low Distortion Complementary Designs

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

 

 

 

 

Collector − Emitter Voltage

VCEO

140

Vdc

Collector − Emitter Voltage

VCEX

160

Vdc

Collector − Base Voltage

VCBO

160

Vdc

Emitter − Base Voltage

VEBO

7

Vdc

Collector Current

IC

 

Adc

− Continuous

 

16

 

− Peak (Note 2)

 

30

 

 

 

 

 

Base Current

IB

 

Adc

− Continuous

 

4

 

− Peak (Note 2)

 

15

 

 

 

 

 

Total Power Dissipation @ TA = 25°C

PD

150

W

Derate above 25°C

 

0.855

W/°C

Operating and Storage Junction

TJ, Tstg

−65 to +200

°C

Temperature Range

 

 

 

 

 

 

 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.Indicates JEDEC Registered Data.

2.Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance,

R JC

1.17

°C/W

Junction−to−Case

 

 

 

 

 

 

 

**For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W

 

MARKING

 

DIAGRAM

 

2Nxxxx

 

MEX

TO−204

AYYWW

 

CASE 1−07

 

xxxx = 3773 or 6609

A

= Assembly Location

YY

= Year

WW

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

*Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2004

1

Publication Order Number:

July, 2004 − Rev. 10

 

2N3773/D

NPN 2N3773*, PNP 2N6609

ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS (Note 3)

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Breakdown Voltage (Note 4)

VCEO(sus)

140

Vdc

 

(IC = 0.2 Adc, IB = 0)

 

 

 

 

 

Collector−Emitter Sustaining Voltage (Note 4)

VCEX(sus)

160

Vdc

 

(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)

 

 

 

 

 

Collector−Emitter Sustaining Voltage

VCER(sus)

150

Vdc

 

(IC = 0.2 Adc, RBE = 100 Ohms)

 

 

 

 

 

Collector Cutoff Current (Note 4)

ICEO

10

mAdc

 

(VCE = 120 Vdc, IB = 0)

 

 

 

 

 

Collector Cutoff Current (Note 4)

ICEX

 

 

mAdc

 

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

 

2

 

 

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150 C)

 

10

 

 

Collector Cutoff Current

ICBO

2

mAdc

 

(VCB = 140 Vdc, IE = 0)

 

 

 

 

 

Emitter Cutoff Current (Note 4)

IEBO

5

mAdc

 

(VBE = 7 Vdc, IC = 0)

 

 

 

 

 

ON CHARACTERISTICS (Note 3)

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

 

 

 

(IC = 8 Adc, VCE = 4 Vdc) (Note 4)

 

15

60

 

 

(IC = 16 Adc, VCE = 4 Vdc)

 

5

 

 

Collector−Emitter Saturation Voltage

VCE(sat)

 

 

Vdc

 

(IC = 8 Adc, IB = 800 mAdc) (Note 4)

 

1.4

 

 

(IC = 16 Adc, IB = 3.2 Adc)

 

4

 

 

Base−Emitter On Voltage (Note 4)

VBE(on)

Ð

2.2

Vdc

 

(IC = 8 Adc, VCE = 4 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Magnitude of Common−Emitter

|hfe|

4

 

Small−Signal, Short−Circuit, Forward Current Transfer Ratio

 

 

 

 

 

(IC = 1 A, f = 50 kHz)

 

 

 

 

 

Small−Signal Current Gain (Note 4)

hfe

40

 

(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)

 

 

 

 

 

SECOND BREAKDOWN CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

IS/b

1.5

Adc

 

t = 1 s (non−repetitive), V CE = 100 V, See Figure 12

 

 

 

 

 

3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.

 

 

 

 

 

4. Indicates JEDEC Registered Data.

 

 

 

 

 

ORDERING INFORMATION

Device

Package

Shipping²

2N3773

TO−204

100 Unit / Tray

 

 

 

2N3773G

TO−204

100 Unit / Tray

 

(Pb−Free)

 

 

 

 

2N6609

TO−204

100 Unit / Tray

 

 

 

²For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

http://onsemi.com

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