2N 2N3771, 2N3772 Service Manual

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2N 2N3771, 2N3772 Service Manual

2N3771, 2N3772

2N3771 is a Preferred Device

High Power NPN Silicon

Power Transistors

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.

Features

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Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771

=2.5 Adc @ VCE = 60 Vdc − 2N3772

Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

2N3771

2N3772

Unit

 

 

 

 

 

Collector−Emitter Voltage

VCEO

40

60

Vdc

Collector−Emitter Voltage

VCEX

50

80

Vdc

Collector−Base Voltage

VCB

50

100

Vdc

Emitter−Base Voltage

VEB

5.0

7.0

Vdc

Collector Current −

Continuous

IC

30

20

Adc

 

Peak

 

30

30

 

 

 

 

 

 

 

Base Current −

Continuous

IB

7.5

5.0

Adc

 

Peak

 

15

15

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

150

W

Derate above 25°C

 

 

0.855

W/°C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

– 65 to +200

°C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance,

qJC

1.17

°C/W

Junction−to−Case

 

 

 

 

 

 

 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

20 and 30 AMPERE

POWER TRANSISTORS

NPN SILICON

40 and 60 VOLTS, 150 WATTS

MARKING

DIAGRAM

 

 

2N377xG

 

 

AYYWW

TO−204AA (TO−3)

MEX

 

CASE 1−07

 

STYLE 1

 

2N377x

= Device Code

 

x = 1 or 2

 

G

= Pb−Free Package

A

= Assembly Location

YY

= Year

 

WW

= Work Week

 

MEX

= Country of Origin

ORDERING INFORMATION

Device

Package

Shipping

2N3771

TO−204

100 Units / Tray

2N3771G

TO−204

100 Units / Tray

 

(Pb−Free)

 

2N3772

TO−204

100 Units / Tray

2N3772G

TO−204

100 Units / Tray

 

(Pb−Free)

 

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

October, 2006 − Rev. 11

 

2N3771/D

2N3771, 2N3772

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage (Note 2 and 3)

2N3771

VCEO(sus)

40

Vdc

 

(IC = 0.2 Adc, IB = 0)

2N3772

 

60

 

 

Collector−Emitter Sustaining Voltage

2N3771

VCEX(sus)

50

Vdc

 

(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 W)

2N3772

 

80

 

 

Collector−Emitter Sustaining Voltage

2N3771

VCER(sus)

45

Vdc

 

(IC = 0.2 Adc, RBE = 100 W)

2N3772

 

70

 

 

Collector Cutoff Current (Note 2)

 

ICEO

 

 

mAdc

 

(VCE = 30 Vdc, IB = 0)

2N3771

 

10

 

 

(VCE = 50 Vdc, IB = 0)

2N3772

 

10

 

 

(VCE = 25 Vdc, IB = 0)

 

 

 

 

 

 

Collector Cutoff Current (Note 2)

 

ICEV

 

 

mAdc

 

(VCE = 50 Vdc, VEB(off) = 1.5 Vdc)

2N3771

 

2.0

 

 

(VCE = 100 Vdc, VEB(off) = 1.5 Vdc)

2N3772

 

5.0

 

 

(VCE = 45 Vdc, VEB(off) = 1.5 Vdc)

2N6257

 

4.0

 

 

(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N3771

 

10

 

 

(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N3772

 

10

 

 

 

 

 

 

 

 

Collector Cutoff Current (Note 2)

 

ICBO

 

 

mAdc

 

(VCB = 50 Vdc, IE = 0)

2N3771

 

2.0

 

 

(VCB = 100 Vdc, IE = 0)

2N3772

 

5.0

 

 

Emitter Cutoff Current (Note 2)

 

IEBO

 

 

mAdc

 

(VBE = 5.0 Vdc, IC = 0)

2N3771

 

5.0

 

 

(VBE = 7.0 Vdc, IC = 0)

2N3772

 

5.0

 

 

ON CHARACTERISTICS (Note 2)

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (Note 3)

 

hFE

 

 

 

(IC = 15 Adc, VCE = 4.0 Vdc)

2N3771

 

15

60

 

 

(IC = 10 Adc, VCE = 4.0 Vdc)

2N3772

 

15

60

 

 

(IC = 8.0 Adc, VCE = 4.0 Vdc)

 

 

 

 

 

 

(IC = 30 Adc, VCE = 4.0 Vdc)

2N3771

 

5.0

 

 

(IC = 20 Adc, VCE = 4.0 Vdc)

2N3772

 

5.0

 

 

 

 

 

 

 

 

 

Collector−Emitter Saturation Voltage

 

VCE(sat)

 

 

Vdc

 

(IC = 15 Adc, IB = 1.5 Adc)

2N3771

 

2.0

 

 

(IC = 10 Adc, IB = 1.0 Adc)

2N3772

 

1.4

 

 

(IC = 30 Adc, IB = 6.0 Adc)

2N3771

 

4.0

 

 

(IC = 20 Adc, IB = 4.0 Adc)

2N3772

 

4.0

 

 

Base−Emitter On Voltage

 

VBE(on)

 

 

Vdc

 

(IC = 15 Adc, VCE = 4.0 Vdc)

2N3771

 

2.7

 

 

(IC = 10 Adc, VCE = 4.0 Vdc)

2N3772

 

2.2

 

 

(IC = 8.0 Adc, VCE = 4.0 Vdc)

 

 

 

 

 

 

*DYNAMIC CHARACTERISTICS (Note 2)

 

 

 

 

 

 

 

 

 

 

 

 

 

Current−Gain — Bandwidth Product

 

fT

0.2

MHz

 

(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)

 

 

 

 

 

 

Small−Signal Current Gain

 

hfe

40

 

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

 

 

 

 

 

 

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive)

IS/b

 

 

Adc

 

(VCE = 40 Vdc)

2N3771

 

3.75

 

 

(VCE = 60 Vdc)

2N3772

 

2.5

 

 

2. Indicates JEDEC registered data.

3. Pulse Test: 300 ms, Rep. Rate 60 cps.

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