ON Semiconductor 2N3055A, 2N3055A-D, MJ15015, MJ15016, 2N3055AG Service Manual
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2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055.
Features
•Current−Gain − Bandwidth−Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) − NPN
=2.2 MHz (Min) − PNP
•Safe Operating Area − Rated to 60 V and 120 V, Respectively
•Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating |
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Symbol |
Value |
Unit |
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Collector−Emitter Voltage |
2N3055A |
VCEO |
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60 |
Vdc |
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MJ15015, MJ15016 |
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120 |
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Collector−Base Voltage |
2N3055A |
VCBO |
100 |
Vdc |
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MJ15015, MJ15016 |
|
200 |
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Collector−Emitter Voltage Base |
VCEV |
100 |
Vdc |
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Reversed Biased |
2N3055A |
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MJ15015, MJ15016 |
|
200 |
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Emitter−Base Voltage |
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VEBO |
7.0 |
Vdc |
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Collector Current − Continuous |
|
IC |
|
15 |
Adc |
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Base Current |
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IB |
7.0 |
Adc |
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Total Device Dissipation @ TC = 25_C |
PD |
115 |
W |
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Derate above 25_C |
2N3055A |
|
0.65 |
W/_C |
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Total Device Dissipation @ TC = 25_C |
|
180 |
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Derate above 25_C |
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1.03 |
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MJ15015, MJ15016 |
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Operating and Storage Junction |
TJ, Tstg |
−65 to +200 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristics |
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Symbol |
Max |
|
Max |
Unit |
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Thermal Resistance, Junction−to−Case |
RqJC |
1.52 |
|
0.98 |
_C/W |
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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG |
MJ1501xG |
AYWW |
AYWW |
MEX |
MEX |
2N3055A |
= Device Code |
|
MJ1501x |
= Device Code |
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x = 5 or 6 |
G |
= Pb−Free Package |
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A |
= |
Assembly Location |
Y |
= |
Year |
WW |
= Work Week |
|
MEX |
= |
Country of Origin |
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2006 |
1 |
Publication Order Number: |
April, 2006 − Rev. 6 |
|
2N3055A/D |
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS (Note 2) |
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Collector−Emitter Sustaining Voltage (Note 3) |
2N3055A |
VCEO(sus) |
60 |
− |
Vdc |
|
(IC = 200 mAdc, IB = 0) |
MJ15015, MJ15016 |
|
120 |
− |
|
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Collector Cutoff Current |
|
ICEO |
|
|
mAdc |
|
(VCE = 30 Vdc, VBE(off) = 0 Vdc) |
2N3055A |
|
− |
0.7 |
|
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(VCE = 60 Vdc, VBE(off) = 0 Vdc) |
MJ15015, MJ15016 |
|
− |
0.1 |
|
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Collector Cutoff Current (Note 3) |
2N3055A |
ICEV |
− |
5.0 |
mAdc |
|
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) |
MJ15015, MJ15016 |
|
− |
1.0 |
|
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Collector Cutoff Current |
|
ICEV |
|
|
mAdc |
|
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, |
2N3055A |
|
− |
30 |
|
|
TC = 150_C) |
MJ15015, MJ15016 |
|
− |
6.0 |
|
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Emitter Cutoff Current |
2N3055A |
IEBO |
− |
5.0 |
mAdc |
|
(VEB = 7.0 Vdc, IC = 0) |
MJ15015, MJ15016 |
|
− |
0.2 |
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SECOND BREAKDOWN (Note 3) |
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Second Breakdown Collector Current with Base Forward Biased |
IS/b |
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Adc |
||
(t = 0.5 s non−repetitive) |
2N3055A |
|
1.95 |
− |
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(VCE = 60 Vdc) |
MJ15015, MJ15016 |
|
3.0 |
− |
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ON CHARACTERISTICS (Note 2 and 3) |
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DC Current Gain |
|
hFE |
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− |
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(IC = 4.0 Adc, VCE = 2.0 Vdc) |
|
|
10 |
70 |
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(IC = 4.0 Adc, VCE = 4.0 Vdc) |
|
|
20 |
70 |
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(IC = 10 Adc, VCE = 4.0 Vdc) |
|
|
5.0 |
− |
|
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Collector−Emitter Saturation Voltage |
|
VCE(sat) |
|
|
Vdc |
|
(IC = 4.0 Adc, IB = 400 mAdc) |
|
|
− |
1.1 |
|
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(IC = 10 Adc, IB = 3.3 Adc) |
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− |
3.0 |
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(IC = 15 Adc, IB = 7.0 Adc) |
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− |
5.0 |
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Base−Emitter On Voltage |
|
VBE(on) |
0.7 |
1.8 |
Vdc |
|
(IC = 4.0 Adc, VCE = 4.0 Vdc) |
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DYNAMIC CHARACTERISTICS (Note 3) |
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Current−Gain − Bandwidth Product |
2N3055A, MJ15015 |
fT |
0.8 |
6.0 |
MHz |
|
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |
MJ15016 |
|
2.2 |
18 |
|
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Output Capacitance |
|
Cob |
60 |
600 |
pF |
|
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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SWITCHING CHARACTERISTICS (2N3055A only) (Note 3) |
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RESISTIVE LOAD |
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Delay Time |
|
td |
− |
0.5 |
ms |
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Rise Time |
(VCC = 30 Vdc, IC = 4.0 Adc, |
tr |
− |
4.0 |
ms |
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IB1 = IB2 = 0.4 Adc, |
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Storage Time |
ts |
− |
3.0 |
ms |
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tp = 25 ms Duty Cycle v 2% |
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Fall Time |
|
tf |
− |
6.0 |
ms |
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2.Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3.Indicates JEDEC Registered Data. (2N3055A)
http://onsemi.com
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