2N 2N3055A, 2N3055A-D, MJ15015, MJ15016, 2N3055AG, MJ15015G, MJ1 Service Manual

Loading...
2N 2N3055A, 2N3055A-D, MJ15015, MJ15016, 2N3055AG, MJ15015G, MJ1 Service Manual

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

MJ15015 and MJ15016 are Preferred Devices

Complementary Silicon

High−Power Transistors

These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055.

Features

Current−Gain − Bandwidth−Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) − NPN

=2.2 MHz (Min) − PNP

Safe Operating Area − Rated to 60 V and 120 V, Respectively

Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

 

Symbol

Value

Unit

 

 

 

 

 

 

 

Collector−Emitter Voltage

2N3055A

VCEO

 

60

Vdc

 

 

 

 

MJ15015, MJ15016

 

120

 

 

 

 

 

 

 

 

Collector−Base Voltage

2N3055A

VCBO

100

Vdc

 

 

 

MJ15015, MJ15016

 

200

 

 

 

 

 

 

 

Collector−Emitter Voltage Base

VCEV

100

Vdc

Reversed Biased

2N3055A

 

 

MJ15015, MJ15016

 

200

 

 

 

 

 

 

 

Emitter−Base Voltage

 

VEBO

7.0

Vdc

Collector Current − Continuous

 

IC

 

15

Adc

Base Current

 

IB

7.0

Adc

Total Device Dissipation @ TC = 25_C

PD

115

W

Derate above 25_C

2N3055A

 

0.65

W/_C

Total Device Dissipation @ TC = 25_C

 

180

 

Derate above 25_C

 

 

1.03

 

MJ15015, MJ15016

 

 

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

−65 to +200

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Characteristics

 

Symbol

Max

 

Max

Unit

 

 

 

 

 

 

Thermal Resistance, Junction−to−Case

RqJC

1.52

 

0.98

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055A)

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 120 VOLTS − 115, 180 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAMS

2N3055AG

MJ1501xG

AYWW

AYWW

MEX

MEX

2N3055A

= Device Code

MJ1501x

= Device Code

 

 

x = 5 or 6

G

= Pb−Free Package

A

=

Assembly Location

Y

=

Year

WW

= Work Week

MEX

=

Country of Origin

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

April, 2006 − Rev. 6

 

2N3055A/D

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS (Note 2)

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage (Note 3)

2N3055A

VCEO(sus)

60

Vdc

(IC = 200 mAdc, IB = 0)

MJ15015, MJ15016

 

120

 

Collector Cutoff Current

 

ICEO

 

 

mAdc

(VCE = 30 Vdc, VBE(off) = 0 Vdc)

2N3055A

 

0.7

 

(VCE = 60 Vdc, VBE(off) = 0 Vdc)

MJ15015, MJ15016

 

0.1

 

Collector Cutoff Current (Note 3)

2N3055A

ICEV

5.0

mAdc

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

MJ15015, MJ15016

 

1.0

 

Collector Cutoff Current

 

ICEV

 

 

mAdc

(VCEV = Rated Value, VBE(off) = 1.5 Vdc,

2N3055A

 

30

 

TC = 150_C)

MJ15015, MJ15016

 

6.0

 

Emitter Cutoff Current

2N3055A

IEBO

5.0

mAdc

(VEB = 7.0 Vdc, IC = 0)

MJ15015, MJ15016

 

0.2

 

SECOND BREAKDOWN (Note 3)

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

IS/b

 

 

Adc

(t = 0.5 s non−repetitive)

2N3055A

 

1.95

 

(VCE = 60 Vdc)

MJ15015, MJ15016

 

3.0

 

ON CHARACTERISTICS (Note 2 and 3)

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

(IC = 4.0 Adc, VCE = 2.0 Vdc)

 

 

10

70

 

(IC = 4.0 Adc, VCE = 4.0 Vdc)

 

 

20

70

 

(IC = 10 Adc, VCE = 4.0 Vdc)

 

 

5.0

 

Collector−Emitter Saturation Voltage

 

VCE(sat)

 

 

Vdc

(IC = 4.0 Adc, IB = 400 mAdc)

 

 

1.1

 

(IC = 10 Adc, IB = 3.3 Adc)

 

 

3.0

 

(IC = 15 Adc, IB = 7.0 Adc)

 

 

5.0

 

Base−Emitter On Voltage

 

VBE(on)

0.7

1.8

Vdc

(IC = 4.0 Adc, VCE = 4.0 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS (Note 3)

 

 

 

 

 

 

 

 

 

 

 

Current−Gain − Bandwidth Product

2N3055A, MJ15015

fT

0.8

6.0

MHz

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

MJ15016

 

2.2

18

 

Output Capacitance

 

Cob

60

600

pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

SWITCHING CHARACTERISTICS (2N3055A only) (Note 3)

 

 

 

 

 

 

 

 

 

 

RESISTIVE LOAD

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

td

0.5

ms

Rise Time

(VCC = 30 Vdc, IC = 4.0 Adc,

tr

4.0

ms

 

IB1 = IB2 = 0.4 Adc,

 

 

 

 

Storage Time

ts

3.0

ms

tp = 25 ms Duty Cycle v 2%

Fall Time

 

tf

6.0

ms

 

 

 

 

 

 

2.Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

3.Indicates JEDEC Registered Data. (2N3055A)

http://onsemi.com

2

+ 4 hidden pages