Texas Instruments UCC2891 User Manual

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Power Up/Down Test Procedures

GAIN AND PHASE

Input Ripple Voltage

 

 

 

vs

 

 

 

 

 

 

FREQUENCY

 

 

VIN = 36 V

 

60

 

 

 

180

 

 

 

 

 

 

IOUT = 30 A

 

 

 

Phase

 

 

 

 

40

 

 

 

120

 

 

 

 

 

 

 

500 mV/div

 

20

 

 

 

60

1 V peak-to-peak

 

 

 

 

 

dB

 

 

 

 

 

- °

Gain-

0

 

 

 

0

Phase

 

 

 

Gain

 

 

 

 

-20

 

 

 

-60

 

 

 

VIN = 48 V

 

 

 

 

 

-40

IOUT = 10 A

 

 

-120

 

 

 

gM =-10dB

 

 

 

 

 

 

ΦM = 50°

 

 

 

 

 

-60

 

 

 

-180

 

 

10

100

1 k

10 k

100 k

 

 

 

 

f - Frequency - Hz

 

 

t − T ime − 2.5 μs/div

 

 

 

 

 

 

 

 

 

Figure 6.

 

 

Figure 8.

 

 

 

 

 

 

 

 

 

 

 

 

Output Ripple Voltage

 

 

 

GAIN AND PHASE

 

 

 

 

 

 

vs

 

 

 

 

 

 

FREQUENCY

 

 

VIN = 72 V

 

 

 

 

 

 

 

60

 

 

 

180

IOUT = 30 A

 

 

 

 

 

 

 

 

 

Phase

 

 

 

 

40

 

 

 

120

 

 

 

 

 

 

 

50 mV/div

 

 

 

 

 

 

36 mV peak-to-peak

 

20

 

 

 

60

 

dB

 

 

 

 

 

- °

Gain-

0

 

Gain

 

0

Phase

 

 

 

 

 

 

 

-20

 

 

 

-60

 

 

 

VIN = 72 V

 

 

 

 

 

-40

IOUT = 10 A

 

 

-120

 

 

 

gM =-9dB

 

 

 

 

 

 

Φ M = 50°

 

 

 

 

 

-60

 

 

 

-180

 

 

10

100

1 k

10 k

100 k

t − T ime − 2.5 μs/div

 

 

 

 

 

 

 

 

 

f - Frequency - Hz

 

 

 

Figure 9.

Figure 7.

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Power Up/Down Test Procedures

Output Ripple Voltage

VIN = 36 V

IOUT = 30 A

50 mV/div

23 mV peak-to-peak

t − T ime − 2.5 μs/div

Figure 10.

Transformer Primary

VIN = 48 V

IOUT = 10 A

VPRI

(40 V/div)

IPRI

(0.5 A/div)

t − T ime − 2.5 μs/div

Figure 11.

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SR Gate Drive

VIN = 36 V

6.3 V, QF Gate (J5)

(5 V/div)

8.4 V, QR Gate (J6)

(5 V/div)

t − T ime − 1 μs/div

Figure 12.

SR Gate Drive

t − T ime − 1 μs/div

Figure 13.

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EVM Assembly Drawing and Layout

8EVM Assembly Drawing and Layout

Figure 14 throughFigure 20 show thetop-sideandbottom-sidecomponent placement for the EVM, as well as device pin numbers where necessary. A four layer PCB was designed using the top and bottom layers for signal traces and component placement along with an internal ground plane. The PCB dimensions are 3.6" x 2.7" with a design goal of fitting all components within the industry standardhalf-brickformat, as outlined by the box dimensions 2.28" x 2.20" shown inFigure 15. All components are standard OTS surface mount components placed on the both sides of the PCB. Thecopper-etchfor each layer is also shown.

Figure 14. Top Side Component Assembly

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EVM Assembly Drawing and Layout

Figure 15. Top Side Silk Screen

Figure 16. Top Signal Trace Layer

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EVM Assembly Drawing and Layout

Figure 17. Internal Split Ground Plane

Figure 18. Internal Signal Trace Layer

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EVM Assembly Drawing and Layout

Figure 19. Bottom Signal Trace Layer

Figure 20. Bottom Side Component Assembly

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List of Materials

9List of Materials

The following table lists the UCC2891EVM components corresponding to the schematic shown in Figure 1.

Table 2. List of Materials

REF

QT

DESCRIPTION

MFR

PART NUMBER

Y

 

 

 

 

C1, C2, C4

3

Capacitor, ceramic, 2.2 μF, 100 V, X7R, 20%, 1812

TDK

C4532X7R2A225M

C3, C14, C17

3

Capacitor, ceramic, 0.1 μF, 50 V, X7R, 20%, 805

Vishay

VJ0805Y104MXAA

C5

1

Capacitor, ceramic, 100 pF, 50 V, NPO, 10%, 805

Vishay

VJ0805A101KXAA

C6, C7

2

Capacitor, ceramic, 0.22 μF, 50 V, X7R, 20%, 805

TDK

C2012X7R1H224M

C8

1

Capacitor, ceramic, 10 nF, 50 V, X7R, 20%, 805

Vishay

VJ0805Y103MXAA

C9

1

Capacitor, ceramic, 33 nF, 250 V, X7R, 10%, 1206

MuRata

GRM31CR72E333KW03L

C10, C11

2

Capacitor, tantalum chip, 47 μF, 16 V, C

Vishay

595D476X9016C2T

C12, C18

2

Capacitor, ceramic, 10 μF, 16 V, X5R, 20%, 1206

TDK

C3216X5R1C106M

C13

1

Capacitor, ceramic, 1.5 μF, 10 V, X5R, 20%, 805

TDK

C2012X5R1A155M

C15

1

Capacitor, ceramic, 82 nF, 50 V, X7R, 10%, 805

Vishay

VJ0805Y823KXAA

C16

1

Capacitor, ceramic, 220 pF, 50 V, NPO, 10%, 805

Vishay

VJ0805A221KXAA

C19, C20

2

Capacitor, POSCAP, 330 μF, 6.3 V, 20%, 7343 (D)

Sanyo

6TPD330M

D1, D2, D3, D4, D5

5

Diode, schottky, 200 mA, 30 V, SOT23

Vishay

BAT54

D8

1

Diode, switching, 200 mA, 200 V, SOT23

Philips/NXP

BAS21

D6

1

Diode, zener, 5.1 V, 350 mW, SOT23

Vishay

BZX84C5V1

D7

1

Adjustable precision shunt regulator, 0.5%, SOT23

TI

TLV431BCDBZ

J1

1

Terminal block, 2 pin, 15 A, 5.1 mm, 0.40 × 0.35

OST

ED500/2DS

J2, J3, J4, J5

4

Adaptor, 3.5 mm probe clip (or 131-5031-00),3.5 mm

Tektronix

131 4244 00

J6, J7, J9, J10

4

Printed circuit pin, 0.043 hole, 0.3 length, 0.043

Mill Max

3103-1-00-15-00-00-0X-0

J8

1

Terminal block, 4 pin, 15 A, 5.1mm, 0.80 × 0.35

OST

ED500/4DS

L1

1

Inductor, 2 μH, 1 pri, 1 sec, 0.920× 0.780

Pulse

PA0373

Q1

1

MOSFET, P-channel,150 V, 2.2 A, 240 mΩ,SO-8

IR

IRF6216

Q2

1

MOSFET, N-channel,150 V, 6.7 A, 50 mΩ,

Vishay

Si7846DP

PowerPak SO-8

 

 

 

 

Q3, Q4, Q5, Q7, Q8

5

MOSFET, N-channel,30 V, 55 A, 2.5 mΩ, LFPAK

Renesas

HAT2165H

Q6

1

Bipolar, NPN, 40 V, 600 mA, 225 mW, SOT23

Vishay

MMBT2222A

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References

Table 2. List of Materials (continued)

REF

QT

DESCRIPTION

MFR

PART NUMBER

Y

 

 

 

 

R1

1

Resistor, chip, 8.45 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-8451-F

R2

1

Resistor, chip, 57.6 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-5762-F

R3

1

Resistor, chip, 76.8 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-7682-F

R4, R10, R15, R16,

7

Resistor, chip, 2.21 Ω, 1/10 W, 1%, 805

Vishay

CRCW0805-2R21-F

R20, R23, R24

 

 

 

 

R5

1

Resistor, chip, 158 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-1583-F

R6

1

Resistor, chip, 1.82 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-1821-F

R7, R8, R12

3

Resistor, chip, 1 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-1001-F

R9

1

Resistor, chip, 11.8 Ω, 1/10 W, 1%, 805

Vishay

CRCW0805-11R8-F

R11

1

Resistor, chip, 26.7 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-2672-F

R13

1

Resistor, chip, 2 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-2001-F

R14

1

Resistor, chip, 10 Ω, 1/10 W, 1%, 805

Vishay

CRCW0805-10R0-F

R17, R18

2

Resistor, chip, 499 Ω, 1/10 W, 1%, 805

Vishay

CRCW0805-4990-F

R19

1

Resistor, chip, 665 Ω, 1/10 W, 1%, 805

Vishay

CRCW0805-6650-F

R21, R22

2

Resistor, chip, 10 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-1002-F

R25

1

Resistor, chip, 51.1 Ω, 1/10 W, 1%, 805

Vishay

CRCW0805-51R1-F

R26

1

Resistor, chip, 28.7 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-2872-F

R27

1

Resistor, chip, 12.1 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-1212-F

R28

1

Resistor, chip, 4.99 kΩ, 1/10 W, 1%, 805

Vishay

CRCW0805-4991-F

T1

1

Transformer, current sense, 10-A,1:100, SMD

Pulse

P8208

T2

1

Transformer, high-frequencyplanar, planar

Pulse

PA0810

U1

1

IC, current mode active clamp PWM controller,

TI

UCC2891D

SO-16

 

 

 

 

U2

1

IC, phototransistor, CTR 100%-300%,SOP-4

Vishay

SFH690BT

10References

1.UCC2891 Current Mode Active Clamp PWM Controller, Datasheet, (SLUS542)

2.Designing for High Efficiency with the UCC2891 Active Clamp PWM Controller, by Steve Mappus, Application Note (SLUA299)

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EVM IMPORTANT NOTICE

Texas Instruments (TI) provides the enclosed product(s) under the following conditions:

This evaluation kit being sold by TI is intended for use for ENGINEERING DEVELOPMENT OR EVALUATION PURPOSES ONLY and is not considered by TI to be fit for commercial use. As such, the goods being provided may not be complete in terms of requireddesign-,marketing-,and/ormanufacturing-relatedprotective considerations, including product safety measures typically found in the end product incorporating the goods. As a prototype, this product does not fall within the scope of the European Union directive on electromagnetic compatibility and therefore may not meet the technical requirements of the directive.

Should this evaluation kit not meet the specifications indicated in the EVM User’s Guide, the kit may be returned within 30 days from the date of delivery for a full refund. THE FOREGOING WARRANTY IS THE EXCLUSIVE WARRANTY MADE BY SELLER TO BUYER AND IS IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED, IMPLIED, OR STATUTORY, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE.

The user assumes all responsibility and liability for proper and safe handling of the goods. Further, the user indemnifies TI from all claims arising from the handling or use of the goods. Please be aware that the products received may not be regulatory compliant or agency certified (FCC, UL, CE, etc.). Due to the open construction of the product, it is the user’s responsibility to take any and all appropriate precautions with regard to electrostatic discharge.

EXCEPT TO THE EXTENT OF THE INDEMNITY SET FORTH ABOVE, NEITHER PARTY SHALL BE LIABLE TO THE OTHER FOR ANY INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES.

TI currently deals with a variety of customers for products, and therefore our arrangement with the user is not exclusive.

TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein.

Please read the EVM User’s Guide and, specifically, the EVM Warnings and Restrictions notice in the EVM User’s Guide prior to handling the product. This notice contains important safety information about temperatures and voltages. For further safety concerns, please contact the TI application engineer.

Persons handling the product must have electronics training and observe good laboratory practice standards.

No license is granted under any patent right or other intellectual property right of TI covering or relating to any machine, process, or combination in which such TI products or services might be or are used.

Mailing Address:

Texas Instruments

Post Office Box 655303

Dallas, Texas 75265

Copyright © 2003--2006,Texas Instruments Incorporated

DYNAMIC WARNINGS AND RESTRICTIONS

It is important to operate this EVM within the input voltage range of 0 Vdc to 72 Vdc.

Exceeding the specified input range may cause unexpected operation and/or irreversible damage to the EVM. If there are questions concerning the input range, please contact a TI field representative prior to connecting the input power.

Applying loads outside of the specified output range may result in unintended operation and/or possible permanent damage to the EVM. Please consult the EVM User’s Guide prior to connecting any load to the EVM output. If there is uncertainty as to the load specification, please contact a TI field representative.

During normal operation, some circuit components may have case temperatures greater than 50°C. The EVM is designed to operate properly with certain components above 50°C as long as the input and output ranges are maintained. These components include but are not limited to linear regulators, switching transistors, pass transistors, and current sense resistors. These types of devices can be identified using the EVM schematic located in the EVM User’s Guide. When placing measurement probes near these devices during operation, please be aware that these devices may be very warm to the touch.

Mailing Address:

Texas Instruments

Post Office Box 655303

Dallas, Texas 75265

Copyright © 2003--2006,Texas Instruments Incorporated